IXKP10N60C5

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Mfr.Part #
IXKP10N60C5
Manufacturer
Littelfuse
Package / Case
TO-220-3
Datasheet
Download
Description
MOSFET N-CH 600V 10A TO220AB
Stock
5,634
In Stock :
5,634

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Operating Temperature :
-55°C~150°C TJ
Input Capacitance :
790 pF
Current - Continuous Drain (Id) @ 25°C :
10A Tc
Mounting Type :
Through Hole
Operating Mode :
ENHANCEMENT MODE
Terminal Position :
Single
Element Configuration :
Single
FET Feature :
Super Junction
Number of Terminations :
3
Drain to Source Breakdown Voltage :
600V
Terminal Form :
THROUGH-HOLE
Pin Count :
3
RoHS :
Compliant
Manufacturer :
IXYS Corporation
Drain to Source Resistance :
385 mΩ
Number of Elements :
1
Input Capacitance (Ciss) (Max) @ Vds :
790pF @ 100V
Transistor Element Material :
SILICON
Packaging :
Tube
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Continuous Drain Current (ID) :
10A
RoHS Status :
ROHS3 Compliant
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Surface Mount :
No
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Power Dissipation (Max) :
--
Number of Terminals :
3
ECCN Code :
EAR99
Series :
CoolMOS™
Package :
Tube
Avalanche Energy Rating (Eas) :
225 mJ
JEDEC-95 Code :
TO-220AB
Rds On (Max) @ Id, Vgs :
385m Ω @ 5.2A, 10V
Supplier Device Package :
TO-220AB
FET Type :
N-Channel
Power Dissipation :
109W
Drive Voltage (Max Rds On,Min Rds On) :
10V
Rds On Max :
385 mΩ
Gate to Source Voltage (Vgs) :
20V
Product Status :
Obsolete
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Package Shape :
RECTANGULAR
Reach Compliance Code :
Compliant
Gate Charge (Qg) (Max) @ Vgs :
22nC @ 10V
JESD-30 Code :
R-PSFM-T3
Drain-source On Resistance-Max :
0.385Ohm
Pbfree Code :
yes
Drain to Source Voltage (Vdss) :
600V
Drain Current-Max (Abs) (ID) :
600A
Max Operating Temperature :
150 °C
Vgs (Max) :
±20V
Polarity/Channel Type :
N-Channel
Qualification Status :
Not Qualified
Mount :
Through Hole
Vgs(th) (Max) @ Id :
3.5V @ 340µA
Published :
2009
Package / Case :
TO-220-3
Base Product Number :
IXKP10
Min Operating Temperature :
-55 °C
Transistor Application :
SWITCHING
Configuration :
SINGLE WITH BUILT-IN DIODE
Datasheets
IXKP10N60C5
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXKP10N60C5 from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Mounting Type:Through Hole, Number of Terminations:3, Package / Case:TO-220-3, IXKP10N60C5 pinout, IXKP10N60C5 datasheet PDF, IXKP10N60C5 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXKP10N60C5 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXKP10N60C5


N-Channel Tube 385m Ω @ 5.2A, 10V ±20V 790pF @ 100V 22nC @ 10V 600V TO-220-3

IXKP10N60C5 Overview


As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 225 mJ.A device's maximum input capacitance is 790pF @ 100V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 10A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=600V, and this device has a drain-to-source breakdown voltage of 600V voltage.Its drain current is 600A, and it is the maximum continuous current the device can conduct.The Drain-to-Source Resistance (DTS) of a MOSFET is 385 mΩ when a specific gate-to-source voltage (VGS) is applied to bias it into the on state.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.To operate this transistor, you need to apply a 600V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.

IXKP10N60C5 Features


the avalanche energy rating (Eas) is 225 mJ
a continuous drain current (ID) of 10A
a drain-to-source breakdown voltage of 600V voltage
single MOSFETs transistor is 385 mΩ
a 600V drain to source voltage (Vdss)


IXKP10N60C5 Applications


There are a lot of IXYS
IXKP10N60C5 applications of single MOSFETs transistors.


  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
  • DC-to-DC converters
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