IXKC25N80C

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Mfr.Part #
IXKC25N80C
Manufacturer
Littelfuse
Package / Case
ISOPLUS220™
Datasheet
Download
Description
MOSFET N-CH 800V 25A ISOPLUS220
Stock
1,849
In Stock :
1,849

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Packaging :
Tube
Polarity/Channel Type :
N-Channel
Drive Voltage (Max Rds On,Min Rds On) :
10V
RoHS Status :
ROHS3 Compliant
Number of Pins :
3
Factory Lead Time :
32 Weeks
Element Configuration :
Single
Continuous Drain Current (ID) :
25A
Power Dissipation-Max (Abs) :
250 W
Transistor Element Material :
SILICON
JESD-609 Code :
e1
Input Capacitance (Ciss) (Max) @ Vds :
4600pF @ 25V
Product Status :
Obsolete
Package :
Tube
Current - Continuous Drain (Id) @ 25°C :
25A Tc
Series :
CoolMOS™
Terminal Position :
Single
Number of Terminals :
3
FET Type :
N-Channel
DS Breakdown Voltage-Min :
800 V
Power Dissipation :
140W
Vgs(th) (Max) @ Id :
4V @ 2mA
Base Product Number :
IXKC25
Drain Current-Max (Abs) (ID) :
20A
Supplier Device Package :
ISOPLUS220™
Mounting Type :
Through Hole
Rds On (Max) @ Id, Vgs :
150m Ω @ 18A, 10V
Package Shape :
RECTANGULAR
FET Feature :
Super Junction
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
Drain-source On Resistance-Max :
0.15Ohm
Case Connection :
Isolated
Operating Temperature :
-55°C~150°C TJ
JESD-30 Code :
R-PSIP-T3
Reach Compliance Code :
Compliant
Turn-Off Delay Time :
75 ns
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Drain to Source Breakdown Voltage :
800V
Published :
2007
Rise Time :
25ns
Avalanche Energy Rating (Eas) :
690 mJ
Manufacturer :
IXYS Corporation
Number of Terminations :
3
Number of Elements :
1
Configuration :
SINGLE WITH BUILT-IN DIODE
Gate Charge (Qg) (Max) @ Vgs :
180nC @ 10V
Fall Time (Typ) :
10 ns
Vgs (Max) :
±20V
Pbfree Code :
yes
Surface Mount :
No
Lead Free :
Lead Free
Power Dissipation (Max) :
--
Drain to Source Voltage (Vdss) :
800V
Terminal Form :
THROUGH-HOLE
Gate to Source Voltage (Vgs) :
20V
Qualification Status :
Not Qualified
Pin Count :
3
Package / Case :
ISOPLUS220™
Transistor Application :
SWITCHING
Mount :
Through Hole
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Operating Mode :
ENHANCEMENT MODE
Additional Feature :
AVALANCHE RATED
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
JEDEC-95 Code :
TO-220AB
Datasheets
IXKC25N80C
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXKC25N80C from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:3, Mounting Type:Through Hole, Operating Temperature:-55°C~150°C TJ, Number of Terminations:3, Package / Case:ISOPLUS220™, IXKC25N80C pinout, IXKC25N80C datasheet PDF, IXKC25N80C amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXKC25N80C ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXKC25N80C


N-Channel Tube 150m Ω @ 18A, 10V ±20V 4600pF @ 25V 180nC @ 10V 800V ISOPLUS220™

IXKC25N80C Overview


Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 690 mJ.A device's maximal input capacitance is 4600pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 25A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 800V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.In this device, the drain current is 20A, which is the maximum continuous current the device can conduct.Its turn-off delay time is 75 ns, which is the time to charge the device's input capacitance before drain current conduction begins.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.To maintain normal operation, it is recommended that the DS breakdown voltage be above 800 V.This transistor requires a 800V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).

IXKC25N80C Features


the avalanche energy rating (Eas) is 690 mJ
a continuous drain current (ID) of 25A
a drain-to-source breakdown voltage of 800V voltage
the turn-off delay time is 75 ns
a 800V drain to source voltage (Vdss)


IXKC25N80C Applications


There are a lot of IXYS
IXKC25N80C applications of single MOSFETs transistors.


  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
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