IXKC20N60C

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Mfr.Part #
IXKC20N60C
Manufacturer
Littelfuse
Package / Case
ISOPLUS220™
Datasheet
Download
Description
MOSFET N-CH 600V 15A ISOPLUS220
Stock
6,201
In Stock :
6,201

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Current - Continuous Drain (Id) @ 25°C :
15A Tc
Package / Case :
ISOPLUS220™
Drive Voltage (Max Rds On,Min Rds On) :
10V
Height :
16 mm
Transistor Element Material :
SILICON
Qualification Status :
Not Qualified
Avalanche Energy Rating (Eas) :
690 mJ
Mount :
Through Hole
Drain Current-Max (Abs) (ID) :
14A
JESD-609 Code :
e1
RoHS :
Details
Minimum Operating Temperature :
- 55 C
Maximum Operating Temperature :
+ 150 C
Turn-Off Delay Time :
67 ns
Pin Count :
3
Product Category :
MOSFET
Power Dissipation (Max) :
--
Pbfree Code :
yes
Package :
Tube
Operating Mode :
ENHANCEMENT MODE
Brand :
IXYS
Mounting Style :
Through Hole
Packaging :
Tube
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Polarity/Channel Type :
N-Channel
FET Type :
N-Channel
Product Status :
Active
Mounting Type :
Through Hole
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
Product Type :
MOSFET
Transistor Type :
1 N-Channel
DS Breakdown Voltage-Min :
600 V
Additional Feature :
AVALANCHE RATED
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Terminal Form :
THROUGH-HOLE
Power Dissipation :
125W
Drain to Source Breakdown Voltage :
600V
Configuration :
Single
Base Product Number :
IXKC20
Fall Time (Typ) :
4.5 ns
Manufacturer :
IXYS
Reach Compliance Code :
Compliant
Published :
2008
FET Feature :
--
Rise Time :
5ns
Terminal Position :
Single
Transistor Application :
SWITCHING
RoHS Status :
ROHS3 Compliant
Number of Elements :
1
Factory Lead Time :
75 Weeks
Surface Mount :
No
Element Configuration :
Single
Gate Charge (Qg) (Max) @ Vgs :
114nC @ 10V
Transistor Polarity :
N-Channel
Vgs (Max) :
±20V
Drain to Source Voltage (Vdss) :
600V
Tradename :
CoolMOS
Continuous Drain Current (ID) :
15A
Number of Terminations :
3
Operating Temperature :
-55°C~150°C TJ
Number of Terminals :
3
Length :
11 mm
Vgs(th) (Max) @ Id :
3.9V @ 1mA
Number of Pins :
3
Case Connection :
Isolated
Drain-source On Resistance-Max :
0.19Ohm
JESD-30 Code :
R-PSIP-T3
Rds On (Max) @ Id, Vgs :
190m Ω @ 16A, 10V
Number of Channels :
1 Channel
Series :
CoolMOS™
Gate to Source Voltage (Vgs) :
20V
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Input Capacitance (Ciss) (Max) @ Vds :
2400pF @ 25V
Package Shape :
RECTANGULAR
Width :
5 mm
Channel Mode :
Enhancement
Supplier Device Package :
ISOPLUS220™
Datasheets
IXKC20N60C
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXKC20N60C from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:ISOPLUS220™, Mounting Type:Through Hole, Number of Terminations:3, Operating Temperature:-55°C~150°C TJ, Number of Pins:3, Number of Channels:1 Channel, IXKC20N60C pinout, IXKC20N60C datasheet PDF, IXKC20N60C amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXKC20N60C ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXKC20N60C


N-Channel Tube 190m Ω @ 16A, 10V ±20V 2400pF @ 25V 114nC @ 10V 600V ISOPLUS220™

IXKC20N60C Overview


This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 690 mJ.The maximum input capacitance of this device is 2400pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 15A.When VGS=600V, and ID flows to VDS at 600VVDS, the drain-source breakdown voltage is 600V in this device.As shown in the table below, the drain current of this device is 14A.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 67 ns.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 600 V.The drain-to-source voltage (Vdss) of this transistor needs to be at 600V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.

IXKC20N60C Features


the avalanche energy rating (Eas) is 690 mJ
a continuous drain current (ID) of 15A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 67 ns
a 600V drain to source voltage (Vdss)


IXKC20N60C Applications


There are a lot of IXYS
IXKC20N60C applications of single MOSFETs transistors.


  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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