IXKC20N60C
- Mfr.Part #
- IXKC20N60C
- Manufacturer
- Littelfuse
- Package / Case
- ISOPLUS220™
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 15A ISOPLUS220
- Stock
- 6,201
- In Stock :
- 6,201
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current - Continuous Drain (Id) @ 25°C :
- 15A Tc
- Package / Case :
- ISOPLUS220™
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Height :
- 16 mm
- Transistor Element Material :
- SILICON
- Qualification Status :
- Not Qualified
- Avalanche Energy Rating (Eas) :
- 690 mJ
- Mount :
- Through Hole
- Drain Current-Max (Abs) (ID) :
- 14A
- JESD-609 Code :
- e1
- RoHS :
- Details
- Minimum Operating Temperature :
- - 55 C
- Maximum Operating Temperature :
- + 150 C
- Turn-Off Delay Time :
- 67 ns
- Pin Count :
- 3
- Product Category :
- MOSFET
- Power Dissipation (Max) :
- --
- Pbfree Code :
- yes
- Package :
- Tube
- Operating Mode :
- ENHANCEMENT MODE
- Brand :
- IXYS
- Mounting Style :
- Through Hole
- Packaging :
- Tube
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Polarity/Channel Type :
- N-Channel
- FET Type :
- N-Channel
- Product Status :
- Active
- Mounting Type :
- Through Hole
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Product Type :
- MOSFET
- Transistor Type :
- 1 N-Channel
- DS Breakdown Voltage-Min :
- 600 V
- Additional Feature :
- AVALANCHE RATED
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Terminal Form :
- THROUGH-HOLE
- Power Dissipation :
- 125W
- Drain to Source Breakdown Voltage :
- 600V
- Configuration :
- Single
- Base Product Number :
- IXKC20
- Fall Time (Typ) :
- 4.5 ns
- Manufacturer :
- IXYS
- Reach Compliance Code :
- Compliant
- Published :
- 2008
- FET Feature :
- --
- Rise Time :
- 5ns
- Terminal Position :
- Single
- Transistor Application :
- SWITCHING
- RoHS Status :
- ROHS3 Compliant
- Number of Elements :
- 1
- Factory Lead Time :
- 75 Weeks
- Surface Mount :
- No
- Element Configuration :
- Single
- Gate Charge (Qg) (Max) @ Vgs :
- 114nC @ 10V
- Transistor Polarity :
- N-Channel
- Vgs (Max) :
- ±20V
- Drain to Source Voltage (Vdss) :
- 600V
- Tradename :
- CoolMOS
- Continuous Drain Current (ID) :
- 15A
- Number of Terminations :
- 3
- Operating Temperature :
- -55°C~150°C TJ
- Number of Terminals :
- 3
- Length :
- 11 mm
- Vgs(th) (Max) @ Id :
- 3.9V @ 1mA
- Number of Pins :
- 3
- Case Connection :
- Isolated
- Drain-source On Resistance-Max :
- 0.19Ohm
- JESD-30 Code :
- R-PSIP-T3
- Rds On (Max) @ Id, Vgs :
- 190m Ω @ 16A, 10V
- Number of Channels :
- 1 Channel
- Series :
- CoolMOS™
- Gate to Source Voltage (Vgs) :
- 20V
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Input Capacitance (Ciss) (Max) @ Vds :
- 2400pF @ 25V
- Package Shape :
- RECTANGULAR
- Width :
- 5 mm
- Channel Mode :
- Enhancement
- Supplier Device Package :
- ISOPLUS220™
- Datasheets
- IXKC20N60C

N-Channel Tube 190m Ω @ 16A, 10V ±20V 2400pF @ 25V 114nC @ 10V 600V ISOPLUS220™
IXKC20N60C Overview
This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 690 mJ.The maximum input capacitance of this device is 2400pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 15A.When VGS=600V, and ID flows to VDS at 600VVDS, the drain-source breakdown voltage is 600V in this device.As shown in the table below, the drain current of this device is 14A.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 67 ns.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 600 V.The drain-to-source voltage (Vdss) of this transistor needs to be at 600V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.
IXKC20N60C Features
the avalanche energy rating (Eas) is 690 mJ
a continuous drain current (ID) of 15A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 67 ns
a 600V drain to source voltage (Vdss)
IXKC20N60C Applications
There are a lot of IXYS
IXKC20N60C applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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