IXKC19N60C5

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Input Capacitance (Ciss) (Max) @ Vds :

2500pF @ 100V

Additional Feature :

AVALANCHE RATED, UL RECOGNIZED

Pin Count :

3

Configuration :

SINGLE WITH BUILT-IN DIODE

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Drain to Source Breakdown Voltage :

600V

Base Product Number :

IXKC19

Continuous Drain Current (ID) :

19A

Package / Case :

ISOPLUS220™

Factory Lead Time :

32 Weeks

FET Feature :

Super Junction

Avalanche Energy Rating (Eas) :

708 mJ

Operating Mode :

ENHANCEMENT MODE

Polarity/Channel Type :

N-Channel

Series :

CoolMOS™

JESD-30 Code :

R-PSIP-T3

Surface Mount :

No

Product Status :

Active

Vgs (Max) :

±20V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Drain-source On Resistance-Max :

0.125Ohm

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Drive Voltage (Max Rds On,Min Rds On) :

10V

Published :

2009

Power Dissipation :

132W

Mounting Type :

Through Hole

Drain to Source Voltage (Vdss) :

600V

Manufacturer :

IXYS Corporation

Terminal Position :

Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Reach Compliance Code :

Compliant

Power Dissipation (Max) :

--

Package Shape :

RECTANGULAR

Number of Elements :

1

Vgs(th) (Max) @ Id :

3.5V @ 1.1mA

Packaging :

Tube

Rds On (Max) @ Id, Vgs :

125m Ω @ 16A, 10V

Mount :

Through Hole

Gate to Source Voltage (Vgs) :

20V

Supplier Device Package :

ISOPLUS220™

Transistor Element Material :

SILICON

Number of Terminals :

3

Element Configuration :

Single

Package :

Tube

Number of Terminations :

3

Case Connection :

Isolated

FET Technology :

METAL-OXIDE SEMICONDUCTOR

FET Type :

N-Channel

Terminal Form :

THROUGH-HOLE

Qualification Status :

Not Qualified

RoHS Status :

ROHS3 Compliant

Pbfree Code :

yes

DS Breakdown Voltage-Min :

600 V

Drain Current-Max (Abs) (ID) :

19 A

Transistor Application :

SWITCHING

JESD-609 Code :

e1

Current - Continuous Drain (Id) @ 25°C :

19A Tc

Operating Temperature :

-55°C~150°C TJ

Gate Charge (Qg) (Max) @ Vgs :

70nC @ 10V