IXKC23N60C5
- Mfr.Part #
- IXKC23N60C5
- Manufacturer
- Littelfuse
- Package / Case
- ISOPLUS220™
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 23A ISOPLUS220
- Stock
- 8,374
- In Stock :
- 8,374
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Operating Temperature :
- -55°C~150°C TJ
- Case Connection :
- Isolated
- Base Product Number :
- IXKC23
- Operating Mode :
- ENHANCEMENT MODE
- Input Capacitance (Ciss) (Max) @ Vds :
- 2800pF @ 100V
- Drain to Source Breakdown Voltage :
- 600V
- Package :
- Tube
- Drain-source On Resistance-Max :
- 0.1Ohm
- Transistor Element Material :
- SILICON
- Mount :
- Through Hole
- FET Type :
- N-Channel
- Avalanche Energy Rating (Eas) :
- 800 mJ
- Continuous Drain Current (ID) :
- 23A
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Mounting Style :
- Through Hole
- Published :
- 2010
- Pin Count :
- 3
- Lead Free :
- Lead Free
- Length :
- 11 mm
- Packaging :
- Tube
- Additional Feature :
- AVALANCHE RATED
- Vgs (Max) :
- ±20V
- Fall Time (Typ) :
- 5 ns
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Turn-Off Delay Time :
- 60 ns
- RoHS :
- Details
- Pbfree Code :
- yes
- Element Configuration :
- Single
- Rds On Max :
- 100 mΩ
- Drain to Source Voltage (Vdss) :
- 600V
- Max Operating Temperature :
- 150 °C
- Input Capacitance :
- 2.8 nF
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Rise Time :
- 5ns
- Vgs(th) (Max) @ Id :
- 3.9V @ 1.2mA
- Drain to Source Resistance :
- 100 mΩ
- Rds On (Max) @ Id, Vgs :
- 100m Ω @ 18A, 10V
- Gate Charge (Qg) (Max) @ Vgs :
- 80nC @ 10V
- Number of Elements :
- 1
- Power Dissipation (Max) :
- --
- Series :
- CoolMOS™
- Current - Continuous Drain (Id) @ 25°C :
- 23A Tc
- FET Feature :
- Super Junction
- Number of Terminations :
- 3
- Mounting Type :
- Through Hole
- Product Category :
- MOSFET
- Supplier Device Package :
- ISOPLUS220™
- Min Operating Temperature :
- -55 °C
- Power Dissipation :
- 147W
- JESD-609 Code :
- e1
- Width :
- 5 mm
- JESD-30 Code :
- R-PSIP-T3
- Minimum Operating Temperature :
- - 55 C
- Maximum Operating Temperature :
- + 150 C
- Package / Case :
- ISOPLUS220™
- Configuration :
- Single
- Reach Compliance Code :
- Unknown
- Height :
- 16 mm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Brand :
- IXYS
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- RoHS Status :
- ROHS3 Compliant
- Transistor Type :
- 1 N-Channel
- Tradename :
- CoolMOS
- Product Status :
- Active
- Transistor Application :
- SWITCHING
- Gate to Source Voltage (Vgs) :
- 20V
- Transistor Polarity :
- N-Channel
- Number of Channels :
- 1 Channel
- Qualification Status :
- Not Qualified
- Factory Lead Time :
- 20 Weeks
- Channel Mode :
- Enhancement
- Manufacturer :
- IXYS
- Product Type :
- MOSFET
- Datasheets
- IXKC23N60C5

N-Channel Tube 100m Ω @ 18A, 10V ±20V 2800pF @ 100V 80nC @ 10V 600V ISOPLUS220™
IXKC23N60C5 Overview
Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 800 mJ.A device's maximal input capacitance is 2800pF @ 100V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 23A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 600V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 60 ns, which is the time to charge the device's input capacitance before drain current conduction begins.When a gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the resistance between the drain and the source of the device is 100 mΩ.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.This transistor requires a 600V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).
IXKC23N60C5 Features
the avalanche energy rating (Eas) is 800 mJ
a continuous drain current (ID) of 23A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 60 ns
single MOSFETs transistor is 100 mΩ
a 600V drain to source voltage (Vdss)
IXKC23N60C5 Applications
There are a lot of IXYS
IXKC23N60C5 applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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