IXKC23N60C5

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Mfr.Part #
IXKC23N60C5
Manufacturer
Littelfuse
Package / Case
ISOPLUS220™
Datasheet
Download
Description
MOSFET N-CH 600V 23A ISOPLUS220
Stock
8,374
In Stock :
8,374

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Operating Temperature :
-55°C~150°C TJ
Case Connection :
Isolated
Base Product Number :
IXKC23
Operating Mode :
ENHANCEMENT MODE
Input Capacitance (Ciss) (Max) @ Vds :
2800pF @ 100V
Drain to Source Breakdown Voltage :
600V
Package :
Tube
Drain-source On Resistance-Max :
0.1Ohm
Transistor Element Material :
SILICON
Mount :
Through Hole
FET Type :
N-Channel
Avalanche Energy Rating (Eas) :
800 mJ
Continuous Drain Current (ID) :
23A
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Mounting Style :
Through Hole
Published :
2010
Pin Count :
3
Lead Free :
Lead Free
Length :
11 mm
Packaging :
Tube
Additional Feature :
AVALANCHE RATED
Vgs (Max) :
±20V
Fall Time (Typ) :
5 ns
Drive Voltage (Max Rds On,Min Rds On) :
10V
Turn-Off Delay Time :
60 ns
RoHS :
Details
Pbfree Code :
yes
Element Configuration :
Single
Rds On Max :
100 mΩ
Drain to Source Voltage (Vdss) :
600V
Max Operating Temperature :
150 °C
Input Capacitance :
2.8 nF
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
Rise Time :
5ns
Vgs(th) (Max) @ Id :
3.9V @ 1.2mA
Drain to Source Resistance :
100 mΩ
Rds On (Max) @ Id, Vgs :
100m Ω @ 18A, 10V
Gate Charge (Qg) (Max) @ Vgs :
80nC @ 10V
Number of Elements :
1
Power Dissipation (Max) :
--
Series :
CoolMOS™
Current - Continuous Drain (Id) @ 25°C :
23A Tc
FET Feature :
Super Junction
Number of Terminations :
3
Mounting Type :
Through Hole
Product Category :
MOSFET
Supplier Device Package :
ISOPLUS220™
Min Operating Temperature :
-55 °C
Power Dissipation :
147W
JESD-609 Code :
e1
Width :
5 mm
JESD-30 Code :
R-PSIP-T3
Minimum Operating Temperature :
- 55 C
Maximum Operating Temperature :
+ 150 C
Package / Case :
ISOPLUS220™
Configuration :
Single
Reach Compliance Code :
Unknown
Height :
16 mm
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Brand :
IXYS
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
RoHS Status :
ROHS3 Compliant
Transistor Type :
1 N-Channel
Tradename :
CoolMOS
Product Status :
Active
Transistor Application :
SWITCHING
Gate to Source Voltage (Vgs) :
20V
Transistor Polarity :
N-Channel
Number of Channels :
1 Channel
Qualification Status :
Not Qualified
Factory Lead Time :
20 Weeks
Channel Mode :
Enhancement
Manufacturer :
IXYS
Product Type :
MOSFET
Datasheets
IXKC23N60C5
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXKC23N60C5 from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Number of Terminations:3, Mounting Type:Through Hole, Package / Case:ISOPLUS220™, Number of Channels:1 Channel, IXKC23N60C5 pinout, IXKC23N60C5 datasheet PDF, IXKC23N60C5 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXKC23N60C5 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXKC23N60C5


N-Channel Tube 100m Ω @ 18A, 10V ±20V 2800pF @ 100V 80nC @ 10V 600V ISOPLUS220™

IXKC23N60C5 Overview


Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 800 mJ.A device's maximal input capacitance is 2800pF @ 100V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 23A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 600V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 60 ns, which is the time to charge the device's input capacitance before drain current conduction begins.When a gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the resistance between the drain and the source of the device is 100 mΩ.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.This transistor requires a 600V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).

IXKC23N60C5 Features


the avalanche energy rating (Eas) is 800 mJ
a continuous drain current (ID) of 23A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 60 ns
single MOSFETs transistor is 100 mΩ
a 600V drain to source voltage (Vdss)


IXKC23N60C5 Applications


There are a lot of IXYS
IXKC23N60C5 applications of single MOSFETs transistors.


  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
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