IXGK50N60B2D1
- Mfr.Part #
- IXGK50N60B2D1
- Manufacturer
- Littelfuse
- Package / Case
- TO-264-3, TO-264AA
- Datasheet
- Download
- Description
- IGBT 600V 75A 400W TO264
- Stock
- 49,709
- In Stock :
- 49,709
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - IGBTs - Single
- Collector Current-Max (IC) :
- 75 A
- Reverse Recovery Time (trr) :
- 35ns
- Surface Mount :
- No
- Test Condition :
- 480V, 40A, 5 Ω, 15V
- Polarity/Channel Type :
- N-Channel
- Reach Compliance Code :
- Compliant
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Collector-Emitter Voltage-Max :
- 600 V
- Mounting Type :
- Through Hole
- Turn On Time :
- 43 ns
- Collector Emitter Breakdown Voltage :
- 600V
- Mount :
- Through Hole
- Case Connection :
- COLLECTOR
- Min Operating Temperature :
- -55 °C
- Turn Off Time-Nom (toff) :
- 430 ns
- Collector Emitter Saturation Voltage :
- 2V
- IGBT Type :
- PT
- Reverse Recovery Time :
- 35 ns
- Package / Case :
- TO-264-3, TO-264AA
- Base Product Number :
- IXGK50
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Operating Temperature :
- -55°C~150°C TJ
- JESD-609 Code :
- e1
- Package :
- Tube
- Weight :
- 10.000011g
- Product Status :
- Active
- Terminal Position :
- Single
- Current - Collector Pulsed (Icm) :
- 200A
- RoHS :
- Compliant
- Number of Terminations :
- 3
- Package Shape :
- RECTANGULAR
- Manufacturer :
- IXYS Corporation
- Vce(on) (Max) @ Vge, Ic :
- 2V @ 15V, 40A
- Collector Emitter Voltage (VCEO) :
- 600V
- Terminal Form :
- THROUGH-HOLE
- RoHS Status :
- ROHS3 Compliant
- Base Part Number :
- IXG*50N60
- Td (on/off) @ 25°C :
- 18ns/190ns
- Max Collector Current :
- 75A
- Series :
- HiPerFAST™
- Pbfree Code :
- yes
- Element Configuration :
- Single
- Published :
- 2004
- Power - Max :
- 400W
- JEDEC-95 Code :
- TO-264AA
- Qualification Status :
- Not Qualified
- JESD-30 Code :
- R-PSFM-T3
- Packaging :
- Tube
- Max Operating Temperature :
- 150 °C
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Input Type :
- Standard
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Number of Terminals :
- 3
- Current - Collector (Ic) (Max) :
- 75A
- Number of Elements :
- 1
- Switching Energy :
- 550μJ (off)
- Max Power Dissipation :
- 400W
- Transistor Application :
- POWER CONTROL
- Voltage - Collector Emitter Breakdown (Max) :
- 600V
- Pin Count :
- 3
- Gate Charge :
- 140nC
- Supplier Device Package :
- TO-264 (IXGK)
- Transistor Element Material :
- SILICON
- Datasheets
- IXGK50N60B2D1

IXGK50N60B2D1 datasheet pdf and Transistors - IGBTs - Single product details from IXYS stock available at
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