IXGK100N170
- Mfr.Part #
- IXGK100N170
- Manufacturer
- Littelfuse
- Package / Case
- TO-264
- Datasheet
- Download
- Description
- IGBT PT 1000V 120A TO-264
- Stock
- 641
- In Stock :
- 641
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - IGBTs - Single
- JEDEC-95 Code :
- TO-264AA
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Operating Temperature :
- -55°C ~ 150°C
- Package / Case :
- TO-264
- Published :
- 2012
- Package Shape :
- RECTANGULAR
- JESD-609 Code :
- e1
- Turn-Off Delay Time :
- 285 ns
- Manufacturer :
- IXYS
- Switching Energy :
- -
- Additional Feature :
- LOW CONDUCTION LOSS
- Input Type :
- Standard
- Operating Temperature Range :
- - 55 C to + 150 C
- Pin Count :
- 3
- IGBT Type :
- -
- Supplier Device Package :
- PLUS264™
- Reach Compliance Code :
- Compliant
- Gate Charge :
- 425 nC
- Factory Lead Time :
- 28 Weeks
- Terminal Form :
- THROUGH-HOLE
- Turn On Delay Time :
- 35 ns
- Min Operating Temperature :
- -55°C
- Base Product Number :
- IXGK100
- Package :
- Tube
- Element Configuration :
- Single
- Brand :
- IXYS
- Current - Collector Pulsed (Icm) :
- 600 A
- Mount :
- Through Hole
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Configuration :
- Single
- Length :
- 20.29 mm
- Current - Collector (Ic) (Max) :
- 170 A
- Power Dissipation :
- 830W
- Collector Emitter Voltage (VCEO) :
- 1.7kV
- Series :
- IXGK100N170
- Number of Terminations :
- 3
- Width :
- 5.31 mm
- Case Connection :
- COLLECTOR
- Mounting Style :
- Through Hole
- Surface Mount :
- No
- Product Status :
- Active
- Minimum Operating Temperature :
- - 55 C
- Voltage - Collector Emitter Breakdown (Max) :
- 1700 V
- Power Dissipation-Max (Abs) :
- 830 W
- Mounting Type :
- Through Hole
- Collector Emitter Saturation Voltage :
- 2.5V
- Transistor Application :
- POWER CONTROL
- Turn On Time :
- 285 ns
- Max Collector Current :
- 600A
- Gate-Emitter Thr Voltage-Max :
- 5V
- Technology :
- Si
- RoHS :
- Details
- Polarity/Channel Type :
- N-Channel
- Radiation Hardening :
- No
- Transistor Element Material :
- SILICON
- Product Type :
- IGBT Transistors
- RoHS Status :
- ROHS3 Compliant
- Turn Off Time-Nom (toff) :
- 720 ns
- Vce(on) (Max) @ Vge, Ic :
- 3V @ 15V, 100A
- Product Category :
- IGBT Transistors
- Power - Max :
- 830 W
- Number of Terminals :
- 3
- Number of Elements :
- 1
- Terminal Position :
- Single
- Collector Current-Max (IC) :
- 170 A
- Packaging :
- Tube
- Gate-Emitter Voltage-Max :
- 20V
- Height :
- 26.59 mm
- Lead Free :
- Lead Free
- Continuous Collector Current :
- 170 A
- Max Operating Temperature :
- 150°C
- Qualification Status :
- Not Qualified
- Test Condition :
- 850V, 100A, 1Ohm, 15V
- Maximum Operating Temperature :
- + 150 C
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector-Emitter Voltage-Max :
- 1700 V
- Pbfree Code :
- yes
- JESD-30 Code :
- R-PSFM-T3
- Td (on/off) @ 25°C :
- 35ns/285ns
- Datasheets
- IXGK100N170

IXGK100N170 datasheet pdf and Transistors - IGBTs - Single product details from IXYS stock available at
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