IXGK120N60B
- Mfr.Part #
- IXGK120N60B
- Manufacturer
- Littelfuse
- Package / Case
- TO-264-3, TO-264AA
- Datasheet
- Download
- Description
- IGBT 600V 200A 660W TO264AA
- Stock
- 9,258
- In Stock :
- 9,258
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - IGBTs - Single
- Number of Terminals :
- 3
- Package :
- Tube
- Collector Current-Max (IC) :
- 200 A
- Collector Emitter Voltage (VCEO) :
- 600V
- Number of Pins :
- 3
- Packaging :
- Tube
- Supplier Device Package :
- TO-264 (IXGK)
- Manufacturer :
- IXYS Corporation
- Input Type :
- Standard
- RoHS Status :
- RoHS Compliant
- Base Part Number :
- IXG*120N60
- Product Status :
- Obsolete
- Base Product Number :
- IXGK120
- Td (on/off) @ 25°C :
- 60ns/200ns
- Test Condition :
- 480V, 100A, 2.4 Ω, 15V
- Qualification Status :
- Not Qualified
- Max Collector Current :
- 200A
- Element Configuration :
- Single
- Terminal Form :
- THROUGH-HOLE
- Collector-Emitter Voltage-Max :
- 600 V
- Max Power Dissipation :
- 660W
- Current - Collector Pulsed (Icm) :
- 300A
- Operating Temperature :
- -55°C~150°C TJ
- Series :
- HiPerFAST™
- Published :
- 2004
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Case Connection :
- COLLECTOR
- Switching Energy :
- 2.4mJ (on), 5.5mJ (off)
- Pbfree Code :
- yes
- Additional Feature :
- Fast
- Turn On Time :
- 120 ns
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Mount :
- Through Hole
- Surface Mount :
- No
- JEDEC-95 Code :
- TO-264AA
- Vce(on) (Max) @ Vge, Ic :
- 2.1V @ 15V, 120A
- Package Shape :
- RECTANGULAR
- Weight :
- 10.000011g
- Turn Off Time-Nom (toff) :
- 540 ns
- Gate-Emitter Voltage-Max :
- 20V
- IGBT Type :
- PT
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Power - Max :
- 660W
- Voltage - Collector Emitter Breakdown (Max) :
- 600V
- Number of Elements :
- 1
- Mounting Type :
- Through Hole
- Number of Terminations :
- 3
- JESD-30 Code :
- R-PSFM-T3
- Package / Case :
- TO-264-3, TO-264AA
- Terminal Position :
- Single
- Polarity/Channel Type :
- N-Channel
- Collector Emitter Saturation Voltage :
- 2.1V
- Transistor Element Material :
- SILICON
- Pin Count :
- 3
- Power Dissipation-Max (Abs) :
- 560 W
- Reach Compliance Code :
- Compliant
- Gate Charge :
- 350nC
- Collector Emitter Breakdown Voltage :
- 600V
- Configuration :
- Single
- Fall Time-Max (tf) :
- 280ns
- Gate-Emitter Thr Voltage-Max :
- 5.5V
- Current - Collector (Ic) (Max) :
- 200A
- Transistor Application :
- POWER CONTROL
- Datasheets
- IXGK120N60B

IXGK120N60B datasheet pdf and Transistors - IGBTs - Single product details from IXYS stock available at
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