IXGH32N90B2

Manufacturer :

Littelfuse

Product Category :

Transistors - IGBTs - Single

Transistor Element Material :

SILICON

Current - Collector Pulsed (Icm) :

200A

Package :

Tube

Test Condition :

720V, 32A, 5 Ω, 15V

Turn Off Time-Nom (toff) :

690 ns

Technology :

Si

Collector Emitter Breakdown Voltage :

900V

Brand :

IXYS

Power - Max :

300W

Manufacturer :

IXYS

Supplier Device Package :

TO-247AD (IXGH)

Package Shape :

RECTANGULAR

Base Product Number :

IXGH32

JESD-609 Code :

e1

Subcategory :

IGBTs

Collector-Emitter Voltage-Max :

900 V

Configuration :

Single

Input Type :

Standard

Length :

16.26 mm

Polarity/Channel Type :

N-Channel

Case Connection :

COLLECTOR

Max Collector Current :

64A

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Collector Current-Max (IC) :

64 A

Factory Lead Time :

8 Weeks

Product Status :

Active

Series :

HiPerFAST™

Reach Compliance Code :

Compliant

Width :

5.3 mm

Maximum Operating Temperature :

+ 150 C

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Number of Elements :

1

Qualification Status :

Not Qualified

Weight :

6.500007g

Pbfree Code :

yes

Voltage - Collector Emitter Breakdown (Max) :

900V

Surface Mount :

No

Operating Temperature :

-55°C~150°C TJ

Product Type :

IGBT Transistors

JEDEC-95 Code :

TO-247AD

Mounting Type :

Through Hole

Package / Case :

TO-247-3

Vce(on) (Max) @ Vge, Ic :

2.7V @ 15V, 32A

Mount :

Through Hole

Published :

2006

Minimum Operating Temperature :

- 55 C

Gate Charge :

89nC

Turn On Time :

42 ns

Packaging :

Tube

JESD-30 Code :

R-PSFM-T3

Pin Count :

3

RoHS :

Details

IGBT Type :

PT

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Mounting Style :

Through Hole

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Terminals :

3

RoHS Status :

ROHS3 Compliant

Base Part Number :

IXG*32N90

Terminal Form :

THROUGH-HOLE

Terminal Position :

Single

Collector Emitter Voltage (VCEO) :

900V

Height :

21.46 mm

Number of Terminations :

3

Current - Collector (Ic) (Max) :

64A

Switching Energy :

2.6mJ (off)

Product Category :

IGBT Transistors

Max Power Dissipation :

300W

Element Configuration :

Single

Td (on/off) @ 25°C :

20ns/260ns

Transistor Application :

POWER CONTROL