IXGH30N60C3D1
- Mfr.Part #
- IXGH30N60C3D1
- Manufacturer
- Littelfuse
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- IGBT 600V 60A 220W TO247
- Stock
- 1,473
- In Stock :
- 1,473
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - IGBTs - Single
- Manuf. code :
- IXY
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Gate-Emitter Thr Voltage-Max :
- 5.5V
- JESD-609 Code :
- e1
- Mounting Style :
- Through Hole
- Collector Current-Max (IC) :
- 60 A
- Case Connection :
- COLLECTOR
- Polarity/Channel Type :
- N-Channel
- Test Condition :
- 300V, 20A, 5 Ω, 15V
- Power Dissipation :
- 220W
- Power Dissipation-Max (Abs) :
- 220 W
- Turn Off Time-Nom (toff) :
- 160 ns
- Length :
- 16.26 mm
- Turn On Time :
- 45 ns
- Number of Pins :
- 3
- Power (max) P(TOT) :
- 220W
- Product Category :
- IGBT Modules
- Mount :
- Through Hole
- Surface Mount :
- No
- Current - Collector (Ic) (Max) :
- 60A
- Collector current :
- 60A
- Pin Count :
- 3
- Factory Lead Time :
- 30 Weeks
- Terminal Position :
- Single
- Base Part Number :
- IXG*30N60
- Collector Emitter Saturation Voltage :
- 600V
- Input Capacitance :
- 915pF
- Operating Temperature :
- -55°C~150°C TJ
- Max Operating Temperature :
- 150 °C
- Collector Emitter Breakdown Voltage :
- 600V
- Number of Terminals :
- 3
- Lead Free :
- Lead Free
- Enclosure :
- TO 247AD
- Max Collector Current :
- 60A
- Type :
- PT
- Max Power Dissipation :
- 220W
- Brand :
- IXYS
- Package / Case :
- TO-247-3
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Transistor Application :
- POWER CONTROL
- Product :
- IGBT Silicon Modules
- IGBT Type :
- --
- Supplier Device Package :
- TO-247AD (IXGH)
- Width :
- 5.3 mm
- Tradename :
- GenX3
- Current - Collector Pulsed (Icm) :
- 150A
- Reach Compliance Code :
- Compliant
- RoHS Status :
- ROHS3 Compliant
- Package :
- Tube
- RoHS :
- Details
- Packaging :
- Tube
- Collector Emitter Voltage (VCEO) :
- 600V
- JESD-30 Code :
- R-PSFM-T3
- Height :
- 21.46 mm
- Gate Charge :
- 38nC
- Mounting Type :
- Through Hole
- Vce(on) (Max) @ Vge, Ic :
- 3V @ 15V, 20A
- Series :
- GenX3™
- Td (on/off) @ 25°C :
- 16ns/42ns
- Reverse Recovery Time (trr) :
- 25ns
- Pbfree Code :
- yes
- Package Shape :
- RECTANGULAR
- Collector-Emitter Voltage-Max :
- 600 V
- Min Operating Temperature :
- -55 °C
- Switching Energy :
- 270μJ (on), 90μJ (off)
- Input Type :
- Standard
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Maximum Operating Temperature :
- + 150 C
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Gate-Emitter Voltage-Max :
- 20V
- Power - Max :
- 220W
- Number of Terminations :
- 3
- Minimum Operating Temperature :
- - 55 C
- Number of Elements :
- 1
- Base Product Number :
- IXGH30
- Product Status :
- Active
- Manufacturer :
- IXYS
- Published :
- 2009
- JEDEC-95 Code :
- TO-247AD
- Product Type :
- IGBT Modules
- Transistor Element Material :
- SILICON
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Terminal Form :
- THROUGH-HOLE
- Voltage - Collector Emitter Breakdown (Max) :
- 600V
- Reverse Recovery Time :
- 25ns
- Qualification Status :
- Not Qualified
- Datasheets
- IXGH30N60C3D1
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IXGH30N60C3D1 datasheet pdf and Transistors - IGBTs - Single product details from IXYS stock available at
Features of the IXYS Transistors - IGBTs - Single IXGH30N60C3D1 include a low on-state voltage drop, a low gate charge, and a fast switching speed. It also has a high current carrying capacity and a high surge current capability. The IGBT is designed to provide reliable operation in a wide range of temperatures and is RoHS compliant.
The IXYS Transistors - IGBTs - Single IXGH30N60C3D1 is suitable for use in a variety of applications, including motor control, power supplies, UPS systems, and solar inverters. It can also be used in automotive applications, such as electric vehicles and hybrid electric vehicles.
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