IXGH30N120B3
- Mfr.Part #
- IXGH30N120B3
- Manufacturer
- Littelfuse
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- DISC IGBT PT-MID FREQUENCY TO-24
- Stock
- 6,906
- In Stock :
- 6,906
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - IGBTs - Single
- Weight :
- 6.500007g
- Length :
- 16.26 mm
- Mount :
- Through Hole
- Terminal Position :
- Single
- Min Operating Temperature :
- -55 °C
- Collector Emitter Saturation Voltage :
- 2.96V
- Package Type :
- TO-247
- Number of Terminations :
- 3
- Base Part Number :
- IXG*30N120
- Input Type :
- Standard
- JEDEC-95 Code :
- TO-247AD
- Polarity/Channel Type :
- N-Channel
- Packaging :
- Tube
- Published :
- 2008
- Supplier Device Package :
- TO-247AD (IXGH)
- Package :
- Tube
- Reverse Recovery Time :
- 100ns
- Height :
- 21.46 mm
- Series :
- GenX3™
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Base Product Number :
- IXGH30
- Mounting Type :
- Through Hole
- Pin Count :
- 3
- Lead Free :
- Lead Free
- Tradename :
- GenX3
- Collector Emitter Voltage (VCEO) :
- 1.2kV
- Collector Current-Max (IC) :
- 28 A
- Additional Feature :
- LOW CONDUCTION LOSS
- Terminal Form :
- THROUGH-HOLE
- Reverse Recovery Time (trr) :
- 100ns
- RoHS :
- Details
- Mounting Style :
- Through Hole
- Product Status :
- Active
- Test Condition :
- 960V, 30A, 5 Ω, 15V
- Manufacturer :
- IXYS
- Number of Elements :
- 1
- JESD-30 Code :
- R-PSFM-T3
- Reach Compliance Code :
- Compliant
- Product Type :
- IGBT Transistors
- Element Configuration :
- Single
- Transistor Application :
- POWER CONTROL
- Gate Charge :
- 87nC
- Power - Max :
- 300W
- Package / Case :
- TO-247-3
- Turn On Time :
- 56 ns
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Width :
- 5.3 mm
- Power Dissipation-Max (Abs) :
- 300 W
- Technology :
- Si
- Current - Collector Pulsed (Icm) :
- 150A
- Package Shape :
- RECTANGULAR
- Max Power Dissipation :
- 300W
- Brand :
- IXYS
- Transistor Element Material :
- SILICON
- Surface Mount :
- No
- Max Collector Current :
- 150A
- Voltage - Collector Emitter Breakdown (Max) :
- 1200V
- Fall Time-Max (tf) :
- 380 ns
- Maximum Operating Temperature :
- +150 °C
- Collector-Emitter Voltage-Max :
- 1200 V
- Collector Emitter Breakdown Voltage :
- 1.2kV
- Vce(on) (Max) @ Vge, Ic :
- 3.5V @ 15V, 30A
- Max Operating Temperature :
- 150 °C
- Turn Off Time-Nom (toff) :
- 471 ns
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Number of Pins :
- 3
- Power Dissipation :
- 300W
- IGBT Type :
- PT
- Case Connection :
- COLLECTOR
- Td (on/off) @ 25°C :
- 16ns/127ns
- Gate-Emitter Voltage-Max :
- 20V
- Configuration :
- Single
- Minimum Operating Temperature :
- -55 °C
- Qualification Status :
- Not Qualified
- Operating Temperature Range :
- - 55 C to + 150 C
- Number of Terminals :
- 3
- Switching Energy :
- 3.47mJ (on), 2.16mJ (off)
- Continuous Collector Current :
- 30 A
- Operating Temperature :
- -55°C~150°C TJ
- RoHS Status :
- ROHS3 Compliant
- Factory Lead Time :
- 20 Weeks
- Product Category :
- IGBT Transistors
- Gate-Emitter Thr Voltage-Max :
- 5V
- Pbfree Code :
- yes
- Datasheets
- IXGH30N120B3
IXGH30N120B3D1 datasheet pdf and Transistors - IGBTs - Single product details from IXYS stock available at
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