IXCP01N90E

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Mfr.Part #
IXCP01N90E
Manufacturer
Littelfuse
Package / Case
TO-220-3
Datasheet
Download
Description
MOSFET N-CH 900V 250MA TO220AB
Stock
24,562
In Stock :
24,562

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Max Operating Temperature :
150 °C
Power Dissipation (Max) :
40W (Tc)
Rds On (Max) @ Id, Vgs :
80 Ω @ 50mA, 10V
Min Operating Temperature :
-55 °C
Base Product Number :
IXCP01
Input Capacitance :
133 pF
Pulsed Drain Current-Max (IDM) :
175A
Vgs (Max) :
±20V
Vgs(th) (Max) @ Id :
5V @ 25μA
Series :
--
Number of Terminals :
3
Transistor Element Material :
SILICON
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Manufacturer :
IXYS Corporation
Drain to Source Breakdown Voltage :
900V
FET Feature :
--
Reach Compliance Code :
Unknown
Input Capacitance (Ciss) (Max) @ Vds :
133pF @ 25V
Operating Mode :
ENHANCEMENT MODE
Operating Temperature :
-55°C~150°C TJ
Case Connection :
DRAIN
Package Shape :
RECTANGULAR
Polarity/Channel Type :
N-Channel
Drain to Source Resistance :
80 Ω
Mounting Type :
Through Hole
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Package :
Tube
FET Type :
N-Channel
JEDEC-95 Code :
TO-220AB
Pin Count :
3
Terminal Finish :
Tin/Lead (Sn/Pb)
Drain to Source Voltage (Vdss) :
900V
Pbfree Code :
yes
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Qualification Status :
Not Qualified
Element Configuration :
Single
Continuous Drain Current (ID) :
250mA
Published :
2002
Transistor Application :
SWITCHING
JESD-30 Code :
R-PSFM-T3
Drive Voltage (Max Rds On,Min Rds On) :
10V
Number of Elements :
1
Packaging :
Tube
RoHS Status :
RoHS Compliant
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Gate Charge (Qg) (Max) @ Vgs :
7.5nC @ 10V
Drain-source On Resistance-Max :
0.08Ohm
Rds On Max :
80 Ω
Power Dissipation-Max (Abs) :
40 W
Terminal Position :
Single
Power Dissipation-Max :
40W Tc
RoHS :
Compliant
Number of Pins :
3
Power Dissipation :
40W
Supplier Device Package :
TO-220AB
Current - Continuous Drain (Id) @ 25°C :
250mA Tc
Turn-Off Delay Time :
61 ns
Number of Terminations :
3
DS Breakdown Voltage-Min :
900 V
Max Power Dissipation :
40 W
Terminal Form :
THROUGH-HOLE
Surface Mount :
No
Package / Case :
TO-220-3
Configuration :
SINGLE WITH BUILT-IN DIODE AND RESISTOR
JESD-609 Code :
e0
Product Status :
Obsolete
Mount :
Through Hole
Datasheets
IXCP01N90E
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXCP01N90E from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Mounting Type:Through Hole, Number of Pins:3, Number of Terminations:3, Package / Case:TO-220-3, IXCP01N90E pinout, IXCP01N90E datasheet PDF, IXCP01N90E amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXCP01N90E ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXCP01N90E


N-Channel Tube 80 Ω @ 50mA, 10V ±20V 133pF @ 25V 7.5nC @ 10V 900V TO-220-3

IXCP01N90E Overview


With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 133pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 250mA.With a drain-source breakdown voltage of 900V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 900V.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 61 ns.Peak drain current for this device is 175A, which is its maximum pulsed drain current.When a specific gate-to-source voltage (VGS) is applied to bias a MOSFET into the on state, a drain-to-source resistance of 80 Ω exists between the drain and source.To maintain normal operation, the DS breakdown voltage should be kept above 900 V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 900V.Using drive voltage (10V) reduces this device's overall power consumption.

IXCP01N90E Features


a continuous drain current (ID) of 250mA
a drain-to-source breakdown voltage of 900V voltage
the turn-off delay time is 61 ns
based on its rated peak drain current 175A.
single MOSFETs transistor is 80 Ω
a 900V drain to source voltage (Vdss)


IXCP01N90E Applications


There are a lot of IXYS
IXCP01N90E applications of single MOSFETs transistors.


  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
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