IXCP01N90E

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Mfr.Part #
IXCP01N90E
Manufacturer
Littelfuse
Package / Case
TO-220-3
Datasheet
Download
Description
MOSFET N-CH 900V 250MA TO220AB
Stock
24,562
In Stock :
24,562

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Packaging :
Tube
DS Breakdown Voltage-Min :
900 V
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Case Connection :
DRAIN
Operating Temperature :
-55°C~150°C TJ
Published :
2002
Qualification Status :
Not Qualified
Transistor Application :
SWITCHING
Reach Compliance Code :
Unknown
Package :
Tube
Max Power Dissipation :
40 W
Pin Count :
3
Max Operating Temperature :
150 °C
Terminal Form :
THROUGH-HOLE
Supplier Device Package :
TO-220AB
Product Status :
Obsolete
FET Technology :
METAL-OXIDE SEMICONDUCTOR
FET Type :
N-Channel
Series :
--
Number of Elements :
1
Gate Charge (Qg) (Max) @ Vgs :
7.5nC @ 10V
Drain-source On Resistance-Max :
0.08Ohm
Power Dissipation-Max :
40W Tc
Operating Mode :
ENHANCEMENT MODE
Number of Terminations :
3
Vgs (Max) :
±20V
Mounting Type :
Through Hole
FET Feature :
--
Vgs(th) (Max) @ Id :
5V @ 25μA
RoHS Status :
RoHS Compliant
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
RoHS :
Compliant
Surface Mount :
No
Manufacturer :
IXYS Corporation
Rds On Max :
80 Ω
Package / Case :
TO-220-3
Rds On (Max) @ Id, Vgs :
80 Ω @ 50mA, 10V
Polarity/Channel Type :
N-Channel
Element Configuration :
Single
JESD-609 Code :
e0
Continuous Drain Current (ID) :
250mA
Transistor Element Material :
SILICON
Turn-Off Delay Time :
61 ns
JEDEC-95 Code :
TO-220AB
Input Capacitance (Ciss) (Max) @ Vds :
133pF @ 25V
Drain to Source Breakdown Voltage :
900V
Package Shape :
RECTANGULAR
Min Operating Temperature :
-55 °C
Configuration :
SINGLE WITH BUILT-IN DIODE AND RESISTOR
Number of Pins :
3
Mount :
Through Hole
Number of Terminals :
3
Drain to Source Voltage (Vdss) :
900V
Drain to Source Resistance :
80 Ω
Pbfree Code :
yes
Power Dissipation (Max) :
40W (Tc)
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Current - Continuous Drain (Id) @ 25°C :
250mA Tc
Pulsed Drain Current-Max (IDM) :
175A
Terminal Finish :
Tin/Lead (Sn/Pb)
Input Capacitance :
133 pF
Base Product Number :
IXCP01
JESD-30 Code :
R-PSFM-T3
Drive Voltage (Max Rds On,Min Rds On) :
10V
Terminal Position :
Single
Power Dissipation :
40W
Power Dissipation-Max (Abs) :
40 W
Datasheets
IXCP01N90E
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXCP01N90E from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Number of Terminations:3, Mounting Type:Through Hole, Package / Case:TO-220-3, Number of Pins:3, IXCP01N90E pinout, IXCP01N90E datasheet PDF, IXCP01N90E amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXCP01N90E ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXCP01N90E


N-Channel Tube 80 Ω @ 50mA, 10V ±20V 133pF @ 25V 7.5nC @ 10V 900V TO-220-3

IXCP01N90E Overview


With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 133pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 250mA.With a drain-source breakdown voltage of 900V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 900V.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 61 ns.Peak drain current for this device is 175A, which is its maximum pulsed drain current.When a specific gate-to-source voltage (VGS) is applied to bias a MOSFET into the on state, a drain-to-source resistance of 80 Ω exists between the drain and source.To maintain normal operation, the DS breakdown voltage should be kept above 900 V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 900V.Using drive voltage (10V) reduces this device's overall power consumption.

IXCP01N90E Features


a continuous drain current (ID) of 250mA
a drain-to-source breakdown voltage of 900V voltage
the turn-off delay time is 61 ns
based on its rated peak drain current 175A.
single MOSFETs transistor is 80 Ω
a 900V drain to source voltage (Vdss)


IXCP01N90E Applications


There are a lot of IXYS
IXCP01N90E applications of single MOSFETs transistors.


  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
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