IXCP01N90E
- Mfr.Part #
- IXCP01N90E
- Manufacturer
- Littelfuse
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 900V 250MA TO220AB
- Stock
- 24,562
- In Stock :
- 24,562
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Max Operating Temperature :
- 150 °C
- Power Dissipation (Max) :
- 40W (Tc)
- Rds On (Max) @ Id, Vgs :
- 80 Ω @ 50mA, 10V
- Min Operating Temperature :
- -55 °C
- Base Product Number :
- IXCP01
- Input Capacitance :
- 133 pF
- Pulsed Drain Current-Max (IDM) :
- 175A
- Vgs (Max) :
- ±20V
- Vgs(th) (Max) @ Id :
- 5V @ 25μA
- Series :
- --
- Number of Terminals :
- 3
- Transistor Element Material :
- SILICON
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Manufacturer :
- IXYS Corporation
- Drain to Source Breakdown Voltage :
- 900V
- FET Feature :
- --
- Reach Compliance Code :
- Unknown
- Input Capacitance (Ciss) (Max) @ Vds :
- 133pF @ 25V
- Operating Mode :
- ENHANCEMENT MODE
- Operating Temperature :
- -55°C~150°C TJ
- Case Connection :
- DRAIN
- Package Shape :
- RECTANGULAR
- Polarity/Channel Type :
- N-Channel
- Drain to Source Resistance :
- 80 Ω
- Mounting Type :
- Through Hole
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Package :
- Tube
- FET Type :
- N-Channel
- JEDEC-95 Code :
- TO-220AB
- Pin Count :
- 3
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Drain to Source Voltage (Vdss) :
- 900V
- Pbfree Code :
- yes
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Qualification Status :
- Not Qualified
- Element Configuration :
- Single
- Continuous Drain Current (ID) :
- 250mA
- Published :
- 2002
- Transistor Application :
- SWITCHING
- JESD-30 Code :
- R-PSFM-T3
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Number of Elements :
- 1
- Packaging :
- Tube
- RoHS Status :
- RoHS Compliant
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Gate Charge (Qg) (Max) @ Vgs :
- 7.5nC @ 10V
- Drain-source On Resistance-Max :
- 0.08Ohm
- Rds On Max :
- 80 Ω
- Power Dissipation-Max (Abs) :
- 40 W
- Terminal Position :
- Single
- Power Dissipation-Max :
- 40W Tc
- RoHS :
- Compliant
- Number of Pins :
- 3
- Power Dissipation :
- 40W
- Supplier Device Package :
- TO-220AB
- Current - Continuous Drain (Id) @ 25°C :
- 250mA Tc
- Turn-Off Delay Time :
- 61 ns
- Number of Terminations :
- 3
- DS Breakdown Voltage-Min :
- 900 V
- Max Power Dissipation :
- 40 W
- Terminal Form :
- THROUGH-HOLE
- Surface Mount :
- No
- Package / Case :
- TO-220-3
- Configuration :
- SINGLE WITH BUILT-IN DIODE AND RESISTOR
- JESD-609 Code :
- e0
- Product Status :
- Obsolete
- Mount :
- Through Hole
- Datasheets
- IXCP01N90E

N-Channel Tube 80 Ω @ 50mA, 10V ±20V 133pF @ 25V 7.5nC @ 10V 900V TO-220-3
IXCP01N90E Overview
With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 133pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 250mA.With a drain-source breakdown voltage of 900V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 900V.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 61 ns.Peak drain current for this device is 175A, which is its maximum pulsed drain current.When a specific gate-to-source voltage (VGS) is applied to bias a MOSFET into the on state, a drain-to-source resistance of 80 Ω exists between the drain and source.To maintain normal operation, the DS breakdown voltage should be kept above 900 V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 900V.Using drive voltage (10V) reduces this device's overall power consumption.
IXCP01N90E Features
a continuous drain current (ID) of 250mA
a drain-to-source breakdown voltage of 900V voltage
the turn-off delay time is 61 ns
based on its rated peak drain current 175A.
single MOSFETs transistor is 80 Ω
a 900V drain to source voltage (Vdss)
IXCP01N90E Applications
There are a lot of IXYS
IXCP01N90E applications of single MOSFETs transistors.
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
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