IXCP01N90E

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Packaging :

Tube

Input Capacitance :

133 pF

RoHS :

Compliant

Number of Terminations :

3

Operating Temperature :

-55°C~150°C TJ

Mount :

Through Hole

Mounting Type :

Through Hole

Terminal Finish :

Tin/Lead (Sn/Pb)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs (Max) :

±20V

DS Breakdown Voltage-Min :

900 V

Rds On (Max) @ Id, Vgs :

80 Ω @ 50mA, 10V

Surface Mount :

No

RoHS Status :

RoHS Compliant

Vgs(th) (Max) @ Id :

5V @ 25μA

JESD-30 Code :

R-PSFM-T3

FET Type :

N-Channel

Pbfree Code :

yes

Max Power Dissipation :

40 W

Turn-Off Delay Time :

61 ns

Number of Pins :

3

Package Shape :

RECTANGULAR

Pulsed Drain Current-Max (IDM) :

175A

Package :

Tube

Transistor Application :

SWITCHING

Power Dissipation :

40W

Number of Terminals :

3

Series :

--

Pin Count :

3

Rds On Max :

80 Ω

Reach Compliance Code :

Unknown

JESD-609 Code :

e0

Drain-source On Resistance-Max :

0.08Ohm

Element Configuration :

Single

JEDEC-95 Code :

TO-220AB

Case Connection :

DRAIN

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Operating Mode :

ENHANCEMENT MODE

Base Product Number :

IXCP01

Drive Voltage (Max Rds On,Min Rds On) :

10V

FET Feature :

--

Input Capacitance (Ciss) (Max) @ Vds :

133pF @ 25V

Transistor Element Material :

SILICON

Supplier Device Package :

TO-220AB

Terminal Position :

Single

Current - Continuous Drain (Id) @ 25°C :

250mA Tc

Product Status :

Obsolete

Continuous Drain Current (ID) :

250mA

Power Dissipation (Max) :

40W (Tc)

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Min Operating Temperature :

-55 °C

Manufacturer :

IXYS Corporation

Qualification Status :

Not Qualified

Polarity/Channel Type :

N-Channel

Max Operating Temperature :

150 °C

Power Dissipation-Max :

40W Tc

Drain to Source Resistance :

80 Ω

Package / Case :

TO-220-3

Drain to Source Voltage (Vdss) :

900V

Published :

2002

Number of Elements :

1

Terminal Form :

THROUGH-HOLE

Drain to Source Breakdown Voltage :

900V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Gate Charge (Qg) (Max) @ Vgs :

7.5nC @ 10V

Power Dissipation-Max (Abs) :

40 W

Configuration :

SINGLE WITH BUILT-IN DIODE AND RESISTOR