IXCP01N90E

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Mfr.Part #
IXCP01N90E
Manufacturer
Littelfuse
Package / Case
TO-220-3
Datasheet
Download
Description
MOSFET N-CH 900V 250MA TO220AB
Stock
24,562
In Stock :
24,562

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Case Connection :
DRAIN
Max Operating Temperature :
150 °C
Product Status :
Obsolete
Pin Count :
3
JESD-30 Code :
R-PSFM-T3
Drive Voltage (Max Rds On,Min Rds On) :
10V
RoHS Status :
RoHS Compliant
Package :
Tube
Transistor Element Material :
SILICON
Pulsed Drain Current-Max (IDM) :
175A
Gate Charge (Qg) (Max) @ Vgs :
7.5nC @ 10V
Polarity/Channel Type :
N-Channel
Package / Case :
TO-220-3
JESD-609 Code :
e0
Min Operating Temperature :
-55 °C
Power Dissipation-Max (Abs) :
40 W
Drain-source On Resistance-Max :
0.08Ohm
Surface Mount :
No
Power Dissipation (Max) :
40W (Tc)
Mount :
Through Hole
Number of Pins :
3
Element Configuration :
Single
Transistor Application :
SWITCHING
Package Shape :
RECTANGULAR
Turn-Off Delay Time :
61 ns
Terminal Finish :
Tin/Lead (Sn/Pb)
Max Power Dissipation :
40 W
DS Breakdown Voltage-Min :
900 V
Pbfree Code :
yes
Continuous Drain Current (ID) :
250mA
Input Capacitance (Ciss) (Max) @ Vds :
133pF @ 25V
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
FET Type :
N-Channel
Terminal Position :
Single
Mounting Type :
Through Hole
Supplier Device Package :
TO-220AB
Current - Continuous Drain (Id) @ 25°C :
250mA Tc
FET Feature :
--
Base Product Number :
IXCP01
Vgs(th) (Max) @ Id :
5V @ 25μA
RoHS :
Compliant
Rds On Max :
80 Ω
Drain to Source Voltage (Vdss) :
900V
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Operating Mode :
ENHANCEMENT MODE
Vgs (Max) :
±20V
JEDEC-95 Code :
TO-220AB
Reach Compliance Code :
Unknown
Number of Terminations :
3
Drain to Source Breakdown Voltage :
900V
Operating Temperature :
-55°C~150°C TJ
Rds On (Max) @ Id, Vgs :
80 Ω @ 50mA, 10V
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Configuration :
SINGLE WITH BUILT-IN DIODE AND RESISTOR
Input Capacitance :
133 pF
Terminal Form :
THROUGH-HOLE
Number of Terminals :
3
Power Dissipation-Max :
40W Tc
Published :
2002
Qualification Status :
Not Qualified
Power Dissipation :
40W
Manufacturer :
IXYS Corporation
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Packaging :
Tube
Drain to Source Resistance :
80 Ω
Number of Elements :
1
Series :
--
Datasheets
IXCP01N90E
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXCP01N90E from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-220-3, Number of Pins:3, Mounting Type:Through Hole, Number of Terminations:3, Operating Temperature:-55°C~150°C TJ, IXCP01N90E pinout, IXCP01N90E datasheet PDF, IXCP01N90E amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXCP01N90E ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXCP01N90E


N-Channel Tube 80 Ω @ 50mA, 10V ±20V 133pF @ 25V 7.5nC @ 10V 900V TO-220-3

IXCP01N90E Overview


With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 133pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 250mA.With a drain-source breakdown voltage of 900V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 900V.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 61 ns.Peak drain current for this device is 175A, which is its maximum pulsed drain current.When a specific gate-to-source voltage (VGS) is applied to bias a MOSFET into the on state, a drain-to-source resistance of 80 Ω exists between the drain and source.To maintain normal operation, the DS breakdown voltage should be kept above 900 V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 900V.Using drive voltage (10V) reduces this device's overall power consumption.

IXCP01N90E Features


a continuous drain current (ID) of 250mA
a drain-to-source breakdown voltage of 900V voltage
the turn-off delay time is 61 ns
based on its rated peak drain current 175A.
single MOSFETs transistor is 80 Ω
a 900V drain to source voltage (Vdss)


IXCP01N90E Applications


There are a lot of IXYS
IXCP01N90E applications of single MOSFETs transistors.


  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
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