IRLMS6702TR

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Element Material :

SILICON

Terminal Form :

Gull wing

Surface Mount :

yes

Input Capacitance (Ciss) (Max) @ Vds :

210pF @ 15V

Packaging :

Cut Tape (CT)

Published :

2004

Terminal Finish :

Matte Tin (Sn)

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Pulsed Drain Current-Max (IDM) :

13A

Series :

HEXFET®

Drain to Source Voltage (Vdss) :

20V

JESD-30 Code :

R-PDSO-G6

ECCN Code :

EAR99

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain Current-Max (Abs) (ID) :

2.3A

RoHS Status :

Non-RoHS Compliant

Configuration :

SINGLE WITH BUILT-IN DIODE

Terminal Position :

Dual

Number of Terminations :

6

Mounting Type :

Surface Mount

Qualification Status :

Not Qualified

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Operating Mode :

ENHANCEMENT MODE

Vgs(th) (Max) @ Id :

700mV @ 250μA

FET Type :

P-Channel

JESD-609 Code :

e3

Rds On (Max) @ Id, Vgs :

200m Ω @ 1.6A, 4.5V

Number of Elements :

1

Transistor Application :

SWITCHING

Gate Charge (Qg) (Max) @ Vgs :

8.8nC @ 4.5V

Current - Continuous Drain (Id) @ 25°C :

2.4A Ta

Package / Case :

SOT-23-6

Drain-source On Resistance-Max :

0.2Ohm

DS Breakdown Voltage-Min :

20V