IRLML0040TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Elements :

1

Power Dissipation-Max :

1.3W Ta

Height :

1.016mm

Power Dissipation :

1.3W

Gate to Source Voltage (Vgs) :

16V

Published :

2009

Fall Time (Typ) :

4.3 ns

Mount :

Surface Mount

Operating Temperature :

-55°C~150°C TJ

Nominal Vgs :

1.8 V

Radiation Hardening :

No

Turn On Delay Time :

5.1 ns

Continuous Drain Current (ID) :

3.6A

Transistor Element Material :

SILICON

Terminal Finish :

Matte Tin (Sn)

Current - Continuous Drain (Id) @ 25°C :

3.6A Ta

Length :

3.0226mm

Terminal Position :

Dual

Vgs(th) (Max) @ Id :

2.5V @ 25µA

Mounting Type :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Breakdown Voltage :

40V

Number of Pins :

3

REACH SVHC :

No SVHC

Number of Terminations :

3

Rds On (Max) @ Id, Vgs :

56m Ω @ 3.6A, 10V

Turn-Off Delay Time :

6.4 ns

Element Configuration :

Single

Width :

1.397mm

RoHS Status :

ROHS3 Compliant

JESD-609 Code :

e3

Input Capacitance (Ciss) (Max) @ Vds :

266pF @ 25V

ECCN Code :

EAR99

FET Type :

N-Channel

Resistance :

56mOhm

Operating Mode :

ENHANCEMENT MODE

Package / Case :

TO-236-3, SC-59, SOT-23-3

Packaging :

Tape and Reel (TR)

Factory Lead Time :

12 Weeks

Gate Charge (Qg) (Max) @ Vgs :

3.9nC @ 4.5V

Terminal Form :

Gull wing

Additional Feature :

High Reliability

Rise Time :

5.4ns

Threshold Voltage :

1.8V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Transistor Application :

SWITCHING

Lead Free :

Lead Free

Vgs (Max) :

±16V

Series :

HEXFET®