IRLML2402GTRPBF
- Mfr.Part #
- IRLML2402GTRPBF
- Manufacturer
- International Rectifier
- Package / Case
- TO-236-3
- Datasheet
- Download
- Description
- MOSFET N-CH 20V 1.2A SOT23
- Stock
- 97,079
- In Stock :
- 97,079
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- Manufacturer :
- International Rectifier
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Operating Mode :
- ENHANCEMENT MODE
- Power Dissipation :
- 540mW
- Max Operating Temperature :
- 150°C
- Mount :
- Surface Mount
- Radiation Hardening :
- No
- Length :
- 3.0226mm
- Continuous Drain Current (ID) :
- 1.2A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Resistance :
- 250mOhm
- Peak Reflow Temperature (Cel) :
- 260
- Gate to Source Voltage (Vgs) :
- 12V
- Turn-Off Delay Time :
- 9.7 ns
- Terminal Form :
- Gull wing
- Width :
- 1.397mm
- Transistor Application :
- SWITCHING
- Height :
- 1.016mm
- Package / Case :
- TO-236-3
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Drain to Source Voltage (Vdss) :
- 20V
- RoHS Status :
- RoHS Compliant
- Number of Pins :
- 3
- Terminal Position :
- Dual
- Terminal Finish :
- Matte Tin (Sn)
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Capacitance - Input :
- 110pF
- Rds On Max :
- 250 mΩ
- Lead Free :
- Lead Free
- Number of Terminations :
- 3
- Power Dissipation-Max :
- 540mW
- Drain to Source Resistance :
- 250mOhm
- Min Operating Temperature :
- -55°C
- Additional Feature :
- High Reliability
- Turn On Delay Time :
- 2.5 ns
- Drain to Source Breakdown Voltage :
- 20V
- Element Configuration :
- Single
- Rise Time :
- 9.5ns
- Fall Time (Typ) :
- 4.8 ns
- ECCN Code :
- EAR99
- JESD-609 Code :
- e3
- Number of Elements :
- 1
- Polarity/Channel Type :
- N-Channel
- Datasheets
- IRLML2402GTRPBF

20V TO-236-3
IRLML2402GTRPBF Overview
In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 20V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 20V.As a result of its turn-off delay time, which is 9.7 ns, the device has taken time to charge its input capacitance before drain current conduction begins.In a MOSFET, Drain to Source Resistance is the resistance between the drain and the source when gate-to-source voltage (VGS) is applied to bias it into the on state; in this device, this resistance is 250mOhm.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 2.5 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 12VV.The transistor must receive a 20V drain to source voltage (Vdss) in order to function.
IRLML2402GTRPBF Features
a continuous drain current (ID) of 1.2A
a drain-to-source breakdown voltage of 20V voltage
the turn-off delay time is 9.7 ns
single MOSFETs transistor is 250mOhm
a 20V drain to source voltage (Vdss)
IRLML2402GTRPBF Applications
There are a lot of Infineon
IRLML2402GTRPBF applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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