IRLM110ATF

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

FET Type :

N-Channel

Pulsed Drain Current-Max (IDM) :

12A

Drive Voltage (Max Rds On,Min Rds On) :

5V

Number of Elements :

1

Package / Case :

TO-261-4, TO-261AA

Peak Reflow Temperature (Cel) :

260

Number of Terminations :

4

DS Breakdown Voltage-Min :

100V

Transistor Element Material :

SILICON

Drain Current-Max (Abs) (ID) :

1.5A

Power Dissipation-Max :

2.2W Tc

Drain to Source Voltage (Vdss) :

100V

Terminal Form :

Gull wing

Current - Continuous Drain (Id) @ 25°C :

1.5A Tc

JESD-30 Code :

R-PDSO-G4

Transistor Application :

SWITCHING

Rds On (Max) @ Id, Vgs :

440m Ω @ 750mA, 5V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Configuration :

SINGLE WITH BUILT-IN DIODE

Surface Mount :

yes

JESD-609 Code :

e3

Packaging :

Tape and Reel (TR)

Reach Compliance Code :

Unknown

Input Capacitance (Ciss) (Max) @ Vds :

235pF @ 25V

Qualification Status :

COMMERCIAL

Pbfree Code :

yes

Vgs(th) (Max) @ Id :

2V @ 250μA

Terminal Position :

Dual

Gate Charge (Qg) (Max) @ Vgs :

8nC @ 5V

RoHS Status :

ROHS3 Compliant

Mounting Type :

Surface Mount

Case Connection :

DRAIN

Avalanche Energy Rating (Eas) :

60 mJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain-source On Resistance-Max :

0.44Ohm

Operating Mode :

ENHANCEMENT MODE

Terminal Finish :

MATTE TIN

Operating Temperature :

-55°C~150°C TJ

Vgs (Max) :

±20V