IRLML2030TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Elements :

1

Pulsed Drain Current-Max (IDM) :

11A

Gate Charge (Qg) (Max) @ Vgs :

1nC @ 4.5V

Power Dissipation-Max :

1.3W Ta

JESD-609 Code :

e3

Length :

3.0226mm

ECCN Code :

EAR99

Turn-Off Delay Time :

4.5 ns

Package / Case :

TO-236-3, SC-59, SOT-23-3

Terminal Form :

Gull wing

Nominal Vgs :

1.7 V

Series :

HEXFET®

Rds On (Max) @ Id, Vgs :

100m Ω @ 2.7A, 10V

Drain Current-Max (Abs) (ID) :

2.2A

Recovery Time :

14 ns

Number of Pins :

3

Transistor Element Material :

SILICON

Terminal Finish :

Matte Tin (Sn)

Gate to Source Voltage (Vgs) :

20V

Mount :

Surface Mount

Width :

1.397mm

Power Dissipation :

1.3W

Terminal Position :

Dual

Threshold Voltage :

1.7V

Current - Continuous Drain (Id) @ 25°C :

2.7A Ta

Packaging :

Tape and Reel (TR)

FET Type :

N-Channel

Factory Lead Time :

12 Weeks

Fall Time (Typ) :

2.9 ns

Resistance :

100MOhm

Transistor Application :

SWITCHING

Radiation Hardening :

No

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Input Capacitance (Ciss) (Max) @ Vds :

110pF @ 15V

Continuous Drain Current (ID) :

2.7A

Vgs(th) (Max) @ Id :

2.3V @ 25μA

Drain to Source Breakdown Voltage :

30V

RoHS Status :

ROHS3 Compliant

Vgs (Max) :

±20V

Number of Terminations :

3

Rise Time :

3.3ns

Lead Free :

Lead Free

Published :

2003

Element Configuration :

Single

REACH SVHC :

No SVHC

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting Type :

Surface Mount

Operating Mode :

ENHANCEMENT MODE

Operating Temperature :

-55°C~150°C TJ

Height :

1.016mm

Turn On Delay Time :

4.1 ns