IRLMS5703TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Mode :

ENHANCEMENT MODE

Drain to Source Breakdown Voltage :

-30V

Transistor Application :

SWITCHING

Additional Feature :

ULTRA LOW RESISTANCE

Voltage - Rated DC :

-30V

Number of Terminations :

6

Number of Elements :

1

Length :

2.9972mm

Mounting Type :

Surface Mount

Terminal Finish :

Matte Tin (Sn)

Nominal Vgs :

-1 V

Turn On Delay Time :

10 ns

Terminal Position :

Dual

Vgs (Max) :

±20V

Resistance :

180mOhm

Operating Temperature :

-55°C~150°C TJ

ECCN Code :

EAR99

Radiation Hardening :

No

Number of Pins :

6

Fall Time (Typ) :

8.4 ns

Terminal Form :

Gull wing

Vgs(th) (Max) @ Id :

1V @ 250μA

Rise Time :

12ns

REACH SVHC :

No SVHC

Gate to Source Voltage (Vgs) :

20V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain Current-Max (Abs) (ID) :

2.4A

Element Configuration :

Single

Turn-Off Delay Time :

20 ns

Power Dissipation-Max :

1.7W Ta

Input Capacitance (Ciss) (Max) @ Vds :

170pF @ 25V

Drain to Source Voltage (Vdss) :

30V

FET Type :

P-Channel

Transistor Element Material :

SILICON

Height :

1.4478mm

Current Rating :

-2.3A

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

JESD-609 Code :

e3

Published :

1997

Width :

1.75mm

Lead Free :

Lead Free

Package / Case :

SOT-23-6

Continuous Drain Current (ID) :

-2.3A

Factory Lead Time :

7 Weeks

Gate Charge (Qg) (Max) @ Vgs :

11nC @ 10V

Mount :

Surface Mount

Dual Supply Voltage :

-30V

Termination :

SMD/SMT

Packaging :

Tape and Reel (TR)

Threshold Voltage :

-1V

Current - Continuous Drain (Id) @ 25°C :

2.4A Ta

RoHS Status :

ROHS3 Compliant

Rds On (Max) @ Id, Vgs :

180m Ω @ 1.6A, 10V

Series :

HEXFET®

Power Dissipation :

1.7W