IRLMS5703TR

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

JESD-30 Code :

R-PDSO-G6

Surface Mount :

yes

Current - Continuous Drain (Id) @ 25°C :

2.3A Ta

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Gate Charge (Qg) (Max) @ Vgs :

11nC @ 10V

FET Type :

P-Channel

RoHS Status :

Non-RoHS Compliant

ECCN Code :

EAR99

Transistor Element Material :

SILICON

DS Breakdown Voltage-Min :

30V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Series :

HEXFET®

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Published :

1997

JESD-609 Code :

e3

Terminal Form :

Gull wing

Input Capacitance (Ciss) (Max) @ Vds :

170pF @ 25V

Terminal Finish :

Matte Tin (Sn)

Number of Elements :

1

Vgs(th) (Max) @ Id :

1V @ 250μA

Additional Feature :

High Reliability

Drain to Source Voltage (Vdss) :

30V

Rds On (Max) @ Id, Vgs :

200m Ω @ 1.6A, 10V

Operating Mode :

ENHANCEMENT MODE

Pulsed Drain Current-Max (IDM) :

13A

Package / Case :

SOT-23-6

Configuration :

SINGLE WITH BUILT-IN DIODE

Transistor Application :

SWITCHING

Drain-source On Resistance-Max :

0.2Ohm

Terminal Position :

Dual

Packaging :

Cut Tape (CT)

Qualification Status :

Not Qualified

Number of Terminations :

6

Drain Current-Max (Abs) (ID) :

2.3A

Mounting Type :

Surface Mount