IRLMS2002TR

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Package / Case :

SOT-23-6

Rds On (Max) @ Id, Vgs :

30m Ω @ 6.5A, 4.5V

Number of Elements :

1

Gate Charge (Qg) (Max) @ Vgs :

22nC @ 5V

Current - Continuous Drain (Id) @ 25°C :

6.5A Ta

Surface Mount :

yes

Number of Terminations :

6

RoHS Status :

Non-RoHS Compliant

Drain to Source Voltage (Vdss) :

20V

Operating Mode :

ENHANCEMENT MODE

Vgs(th) (Max) @ Id :

1.2V @ 250µA

Series :

HEXFET®

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Configuration :

SINGLE WITH BUILT-IN DIODE

Terminal Form :

Gull wing

Input Capacitance (Ciss) (Max) @ Vds :

1310pF @ 15V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Published :

2003

JESD-30 Code :

R-PDSO-G6

Transistor Application :

SWITCHING

Packaging :

Cut Tape (CT)

Pulsed Drain Current-Max (IDM) :

20A

JESD-609 Code :

e3

Qualification Status :

Not Qualified

Terminal Position :

Dual

Drain-source On Resistance-Max :

0.03Ohm

Mounting Type :

Surface Mount

Additional Feature :

ULTRA-LOW RESISTANCE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

ECCN Code :

EAR99

Transistor Element Material :

SILICON

FET Type :

N-Channel

Drain Current-Max (Abs) (ID) :

6.5A

Terminal Finish :

Matte Tin (Sn)

DS Breakdown Voltage-Min :

20V