IRLMS2002GTRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Rds On Max :

30 mΩ

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 4.5V

Packaging :

Tape and Reel (TR)

Power Dissipation :

2W

Length :

2.9972mm

Fall Time (Typ) :

16 ns

Continuous Drain Current (ID) :

6.5A

Package / Case :

SOT-23-6

Series :

HEXFET®

Gate Charge (Qg) (Max) @ Vgs :

22nC @ 5V

Input Capacitance :

1.31nF

Drain to Source Breakdown Voltage :

20V

Rds On (Max) @ Id, Vgs :

30mOhm @ 6.5A, 4.5V

Vgs (Max) :

±12V

Published :

2005

Input Capacitance (Ciss) (Max) @ Vds :

1310pF @ 15V

Gate to Source Voltage (Vgs) :

12V

Turn On Delay Time :

8.5 ns

Vgs(th) (Max) @ Id :

1.2V @ 250µA

Turn-Off Delay Time :

36 ns

FET Type :

N-Channel

Max Operating Temperature :

150°C

Current - Continuous Drain (Id) @ 25°C :

6.5A Ta

Rise Time :

11ns

Number of Pins :

6

Operating Temperature :

-55°C~150°C TJ

RoHS Status :

RoHS Compliant

Height :

1.2954mm

Mount :

Surface Mount

Width :

1.75mm

Min Operating Temperature :

-55°C

Power Dissipation-Max :

2W Ta

Element Configuration :

Single

Radiation Hardening :

No

Drain to Source Resistance :

30mOhm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting Type :

Surface Mount

Drain to Source Voltage (Vdss) :

20V

Supplier Device Package :

Micro6™(SOT23-6)