IRLMS1902TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Current Rating :

3.2A

Gate to Source Voltage (Vgs) :

12V

Element Configuration :

Single

Input Capacitance (Ciss) (Max) @ Vds :

300pF @ 15V

Terminal Form :

Gull wing

Threshold Voltage :

700mV

Drain to Source Breakdown Voltage :

20V

Power Dissipation :

1.7W

REACH SVHC :

No SVHC

Terminal Finish :

Matte Tin (Sn)

Vgs (Max) :

±12V

Operating Temperature :

-55°C~150°C TJ

Additional Feature :

High Reliability

Resistance :

10Ohm

Number of Pins :

3

Voltage - Rated DC :

20V

Mounting Type :

Surface Mount

Continuous Drain Current (ID) :

3.2A

Current - Continuous Drain (Id) @ 25°C :

3.2A Ta

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Published :

2004

Series :

HEXFET®

Vgs(th) (Max) @ Id :

700mV @ 250μA

Power Dissipation-Max :

1.7W Ta

Lead Free :

Lead Free

Nominal Vgs :

700 mV

Package / Case :

SOT-23-6

Factory Lead Time :

12 Weeks

Height :

1.143mm

Terminal Position :

Dual

Rds On (Max) @ Id, Vgs :

100m Ω @ 2.2A, 4.5V

Mount :

Surface Mount

Length :

2.9972mm

Packaging :

Tape and Reel (TR)

Number of Elements :

1

JESD-609 Code :

e3

Width :

1.75mm

JESD-30 Code :

R-PDSO-G6

Drive Voltage (Max Rds On,Min Rds On) :

2.7V 4.5V

Number of Terminations :

6

Fall Time (Typ) :

4 ns

RoHS Status :

ROHS3 Compliant

Rise Time :

11ns

Turn-Off Delay Time :

12 ns

Transistor Application :

SWITCHING

Radiation Hardening :

No

Transistor Element Material :

SILICON

Gate Charge (Qg) (Max) @ Vgs :

7nC @ 4.5V

FET Type :

N-Channel

Turn On Delay Time :

7 ns

Operating Mode :

ENHANCEMENT MODE