IRLMS1902TR

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Mode :

ENHANCEMENT MODE

Transistor Element Material :

SILICON

Series :

HEXFET®

Mounting Type :

Surface Mount

Vgs (Max) :

±12V

Power Dissipation-Max :

1.7W Ta

Drain to Source Voltage (Vdss) :

20V

JESD-30 Code :

R-PDSO-G6

Additional Feature :

High Reliability

Drain Current-Max (Abs) (ID) :

3.2A

Package / Case :

SOT-23-6

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Vgs(th) (Max) @ Id :

700mV @ 250μA

Current - Continuous Drain (Id) @ 25°C :

3.2A Ta

Qualification Status :

Not Qualified

Published :

2004

Surface Mount :

yes

Packaging :

Tape and Reel (TR)

Operating Temperature :

-55°C~150°C TJ

Rds On (Max) @ Id, Vgs :

100m Ω @ 2.2A, 4.5V

Number of Terminations :

6

FET Type :

N-Channel

DS Breakdown Voltage-Min :

20V

Configuration :

SINGLE WITH BUILT-IN DIODE

Input Capacitance (Ciss) (Max) @ Vds :

300pF @ 15V

Gate Charge (Qg) (Max) @ Vgs :

7nC @ 4.5V

ECCN Code :

EAR99

Number of Elements :

1

Terminal Finish :

Matte Tin (Sn)

JESD-609 Code :

e3

Pulsed Drain Current-Max (IDM) :

18A

Terminal Form :

Gull wing

Transistor Application :

SWITCHING

RoHS Status :

Non-RoHS Compliant

Drain-source On Resistance-Max :

0.1Ohm

Terminal Position :

Dual

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Drive Voltage (Max Rds On,Min Rds On) :

2.7V 4.5V