IRLMS1503TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Mount :

Surface Mount

Reverse Recovery Time :

36 ns

Packaging :

Tape and Reel (TR)

Package / Case :

SOT-23-6

Gate Charge (Qg) (Max) @ Vgs :

9.6nC @ 10V

JESD-609 Code :

e3

Lead Free :

Lead Free

Series :

HEXFET®

Turn-Off Delay Time :

10 ns

Contact Plating :

Tin

Threshold Voltage :

1V

Input Capacitance (Ciss) (Max) @ Vds :

210pF @ 25V

Nominal Vgs :

1 V

Rise Time :

4.4ns

Turn On Delay Time :

4.6 ns

Vgs(th) (Max) @ Id :

1V @ 250μA

Fall Time (Typ) :

2 ns

Voltage - Rated DC :

30V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Mounting Type :

Surface Mount

Terminal Form :

Gull wing

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Terminal Position :

Dual

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Published :

2004

Continuous Drain Current (ID) :

3.2A

Transistor Element Material :

SILICON

Additional Feature :

ULTRA LOW RESISTANCE

Current Rating :

3.2A

Operating Temperature :

-55°C~150°C TJ

Rds On (Max) @ Id, Vgs :

100m Ω @ 2.2A, 10V

ECCN Code :

EAR99

Power Dissipation-Max :

1.7W Ta

Number of Pins :

6

Number of Elements :

1

FET Type :

N-Channel

Termination :

SMD/SMT

Drain to Source Breakdown Voltage :

30V

Power Dissipation :

1.7W

Transistor Application :

SWITCHING

Length :

2.9972mm

Factory Lead Time :

12 Weeks

Gate to Source Voltage (Vgs) :

20V

REACH SVHC :

No SVHC

Resistance :

100MOhm

Number of Terminations :

6

Vgs (Max) :

±20V

Height :

1.143mm

RoHS Status :

ROHS3 Compliant

Element Configuration :

Single

Operating Mode :

ENHANCEMENT MODE

Current - Continuous Drain (Id) @ 25°C :

3.2A Ta

Width :

1.75mm