IRLMS1503TR

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Application :

SWITCHING

Gate Charge (Qg) (Max) @ Vgs :

9.6nC @ 10V

Pulsed Drain Current-Max (IDM) :

18A

FET Type :

N-Channel

Drain to Source Voltage (Vdss) :

30V

Packaging :

Cut Tape (CT)

Configuration :

SINGLE WITH BUILT-IN DIODE

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Rds On (Max) @ Id, Vgs :

100m Ω @ 2.2A, 10V

Number of Elements :

1

JESD-609 Code :

e3

Number of Terminations :

6

Additional Feature :

High Reliability

Input Capacitance (Ciss) (Max) @ Vds :

210pF @ 25V

Terminal Form :

Gull wing

Operating Mode :

ENHANCEMENT MODE

ECCN Code :

EAR99

Series :

HEXFET®

DS Breakdown Voltage-Min :

30V

Drain-source On Resistance-Max :

0.1Ohm

Vgs(th) (Max) @ Id :

1V @ 250μA

Transistor Element Material :

SILICON

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current - Continuous Drain (Id) @ 25°C :

3.2A Ta

Published :

2004

JESD-30 Code :

R-PDSO-G6

Terminal Position :

Dual

Terminal Finish :

Matte Tin (Sn)

Surface Mount :

yes

Mounting Type :

Surface Mount

RoHS Status :

Non-RoHS Compliant

Package / Case :

SOT-23-6

Qualification Status :

Not Qualified

Drain Current-Max (Abs) (ID) :

3.2A

Peak Reflow Temperature (Cel) :

NOT SPECIFIED