IRLML9303TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Mounting Type :

Surface Mount

Current - Continuous Drain (Id) @ 25°C :

2.3A Ta

Drain to Source Voltage (Vdss) :

30V

Nominal Vgs :

-1.3 V

Published :

2005

RoHS Status :

ROHS3 Compliant

Fall Time (Typ) :

8.6 ns

Pulsed Drain Current-Max (IDM) :

12A

Terminal Position :

Dual

Gate to Source Voltage (Vgs) :

20V

Radiation Hardening :

No

Vgs(th) (Max) @ Id :

2.4V @ 10μA

Continuous Drain Current (ID) :

-2.3A

Power Dissipation :

1.25W

Mount :

Surface Mount

Lead Free :

Lead Free

Rise Time :

14ns

Terminal Finish :

Matte Tin (Sn)

Package / Case :

TO-236-3, SC-59, SOT-23-3

Operating Mode :

ENHANCEMENT MODE

Input Capacitance (Ciss) (Max) @ Vds :

160pF @ 25V

Transistor Application :

SWITCHING

REACH SVHC :

No SVHC

Number of Pins :

3

Operating Temperature :

-55°C~150°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs (Max) :

±20V

Width :

1.397mm

Terminal Form :

Gull wing

Transistor Element Material :

SILICON

Turn-Off Delay Time :

9 ns

Element Configuration :

Single

Drain to Source Breakdown Voltage :

-30V

Number of Terminations :

3

Length :

3.0226mm

Turn On Delay Time :

7.5 ns

Packaging :

Tape and Reel (TR)

Power Dissipation-Max :

1.25W Ta

Number of Elements :

1

Rds On (Max) @ Id, Vgs :

165m Ω @ 2.3A, 10V

Resistance :

165mOhm

Height :

1.016mm

Threshold Voltage :

-1.3V

ECCN Code :

EAR99

JESD-609 Code :

e3

Gate Charge (Qg) (Max) @ Vgs :

2nC @ 4.5V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Recovery Time :

18 ns

Series :

HEXFET®

FET Type :

P-Channel

Factory Lead Time :

12 Weeks