IRLML6402TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Package / Case :

TO-236-3, SC-59, SOT-23-3

Lead Free :

Lead Free

Current Rating :

-3.7A

Dual Supply Voltage :

-20V

Drain to Source Breakdown Voltage :

-20V

Fall Time (Typ) :

381 ns

Current - Continuous Drain (Id) @ 25°C :

3.7A Ta

Max Junction Temperature (Tj) :

150°C

Height :

1.12mm

Rise Time :

48ns

Pulsed Drain Current-Max (IDM) :

22A

Power Dissipation :

1.3W

Element Configuration :

Single

Transistor Element Material :

SILICON

Length :

3.0226mm

Manufacturer Package Identifier :

Micro3

Gate Charge (Qg) (Max) @ Vgs :

12nC @ 5V

Mount :

Surface Mount

Time@Peak Reflow Temperature-Max (s) :

30

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rds On (Max) @ Id, Vgs :

65m Ω @ 3.7A, 4.5V

Number of Channels :

1

Number of Elements :

1

Termination :

SMD/SMT

Vgs (Max) :

±12V

Additional Feature :

High Reliability

Number of Terminations :

3

Number of Pins :

3

Series :

HEXFET®

Transistor Application :

SWITCHING

JESD-609 Code :

e3

RoHS Status :

ROHS3 Compliant

Resistance :

65mOhm

Drain to Source Voltage (Vdss) :

20V

Contact Plating :

Tin

Packaging :

Tape and Reel (TR)

ECCN Code :

EAR99

Vgs(th) (Max) @ Id :

1.2V @ 250µA

Threshold Voltage :

-550mV

Published :

2005

Factory Lead Time :

12 Weeks

Nominal Vgs :

-550 mV

FET Type :

P-Channel

Operating Temperature :

-55°C~150°C TJ

Gate to Source Voltage (Vgs) :

12V

Peak Reflow Temperature (Cel) :

260

Operating Mode :

ENHANCEMENT MODE

Terminal Form :

Gull wing

REACH SVHC :

No SVHC

Voltage - Rated DC :

-20V

Radiation Hardening :

No

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 4.5V

Mounting Type :

Surface Mount

Turn On Delay Time :

350 ns

Continuous Drain Current (ID) :

-3.7A

Power Dissipation-Max :

1.3W Ta

Turn-Off Delay Time :

588 ns

Terminal Position :

Dual

Input Capacitance (Ciss) (Max) @ Vds :

633pF @ 10V

Width :

1.397mm