IRLML6402TRPBF-1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Manufacturer :

International Rectifier

Operating Temperature :

-55°C ~ 150°C (TJ)

Power Dissipation (Max) :

1.3W (Ta)

Maximum Power Dissipation (mW) :

1300

Product Status :

Obsolete

Drive Voltage (Max Rds On, Min Rds On) :

2.5V, 4.5V

Typical Fall Time (ns) :

381

Lead Shape :

Gull-wing

Configuration :

Single

PPAP :

No

Technology :

MOSFET (Metal Oxide)

Packaging :

Tape and Reel

FET Type :

P-Channel

FET Feature :

-

Mounting Type :

Surface Mount

Typical Rise Time (ns) :

48

Number of Elements per Chip :

1

Package / Case :

TO-236-3, SC-59, SOT-23-3

Typical Input Capacitance @ Vds (pF) :

633@10V

Channel Mode :

Enhancement

Vgs(th) (Max) @ Id :

1.2V @ 250µA

Maximum Drain Source Voltage (V) :

20

ECCN (US) :

EAR99

Maximum Gate Source Leakage Current (nA) :

100

EU RoHS :

Compliant

Typical Turn-On Delay Time (ns) :

350

Drain to Source Voltage (Vdss) :

20 V

Maximum Operating Temperature (°C) :

150

Minimum Operating Temperature (°C) :

-55

Supplier Device Package :

Micro3™/SOT-23

Automotive :

No

Mounting :

Surface Mount

Vgs (Max) :

±12V

Pin Count :

3

PCB changed :

3

Current - Continuous Drain (Id) @ 25°C :

3.7A (Ta)

Gate Charge (Qg) (Max) @ Vgs :

12 nC @ 5 V

Typical Gate Charge @ Vgs (nC) :

8@5V

Reach Compliance Code :

Unknown

Channel Type :

P

Supplier Package :

SOT-23

Rds On (Max) @ Id, Vgs :

65mOhm @ 3.7A, 4.5V

Category :

Power MOSFET

Package Height :

1.02(Max)

Input Capacitance (Ciss) (Max) @ Vds :

633 pF @ 10 V

Maximum Gate Source Voltage (V) :

±12

Standard Package Name :

SOT

Maximum Continuous Drain Current (A) :

3.7

Typical Turn-Off Delay Time (ns) :

588

Maximum IDSS (uA) :

1

Process Technology :

HEXFET

Series :

HEXFET®

Maximum Gate Threshold Voltage (V) :

1.2

Package Length :

3.04(Max)

Package :

Tape and Reel (TR)

Package Width :

1.4(Max)