IRLML6402TR

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Dual Supply Voltage :

-20V

Nominal Vgs :

-550 mV

Drain to Source Breakdown Voltage :

-20V

Power Dissipation :

1.3W

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Turn-Off Delay Time :

588 ns

Fall Time (Typ) :

381 ns

Number of Pins :

3

Additional Feature :

High Reliability

Transistor Application :

SWITCHING

Number of Elements :

1

Height :

1.12mm

Lead Free :

Lead Free

Rds On (Max) @ Id, Vgs :

65m Ω @ 3.7A, 4.5V

Current Rating :

-3.7A

Continuous Drain Current (ID) :

-3.7A

Gate Charge (Qg) (Max) @ Vgs :

12nC @ 5V

JESD-609 Code :

e3

Number of Terminations :

3

Width :

1.397mm

Turn On Delay Time :

350 ns

Power Dissipation-Max :

1.3W Ta

Package / Case :

TO-236-3, SC-59, SOT-23-3

Terminal Form :

Gull wing

Packaging :

Tape and Reel (TR)

RoHS Status :

ROHS3 Compliant

Drain to Source Voltage (Vdss) :

20V

Mounting Type :

Surface Mount

Published :

2005

Pulsed Drain Current-Max (IDM) :

22A

Manufacturer Package Identifier :

Micro3

Contact Plating :

Tin

Transistor Element Material :

SILICON

ECCN Code :

EAR99

Peak Reflow Temperature (Cel) :

260

Terminal Position :

Dual

REACH SVHC :

No SVHC

Length :

3.0226mm

Mount :

Surface Mount

Number of Channels :

1

Element Configuration :

Single

Vgs (Max) :

±12V

Current - Continuous Drain (Id) @ 25°C :

3.7A Ta

Operating Temperature :

-55°C~150°C TJ

Radiation Hardening :

No

Time@Peak Reflow Temperature-Max (s) :

30

Factory Lead Time :

12 Weeks

Voltage - Rated DC :

-20V

Threshold Voltage :

-550mV

Termination :

SMD/SMT

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 4.5V

Gate to Source Voltage (Vgs) :

12V

Operating Mode :

ENHANCEMENT MODE

Resistance :

65mOhm

Vgs(th) (Max) @ Id :

1.2V @ 250µA

Max Junction Temperature (Tj) :

150°C

Rise Time :

48ns

Input Capacitance (Ciss) (Max) @ Vds :

633pF @ 10V

FET Type :

P-Channel

Series :

HEXFET®