IRLML6401TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Package / Case :

TO-236-3, SC-59, SOT-23-3

Series :

HEXFET®

Power Dissipation :

1.3W

Number of Elements :

1

Nominal Vgs :

-550 mV

REACH SVHC :

No SVHC

Current - Continuous Drain (Id) @ 25°C :

4.3A Ta

Width :

1.397mm

RoHS Status :

ROHS3 Compliant

Radiation Hardening :

No

Terminal Form :

Gull wing

Additional Feature :

High Reliability

Turn-Off Delay Time :

250 ns

Resistance :

50mOhm

Gate to Source Voltage (Vgs) :

8V

Power Dissipation-Max :

1.3W Ta

Lead Free :

Lead Free

Termination :

SMD/SMT

Dual Supply Voltage :

-12V

Operating Mode :

ENHANCEMENT MODE

Height :

1.12mm

Drain to Source Breakdown Voltage :

-12V

Gate Charge (Qg) (Max) @ Vgs :

15nC @ 5V

Input Capacitance (Ciss) (Max) @ Vds :

830pF @ 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Terminations :

3

Terminal Position :

Dual

Packaging :

Tape and Reel (TR)

Turn On Delay Time :

11 ns

Fall Time (Typ) :

210 ns

Factory Lead Time :

12 Weeks

Voltage - Rated DC :

-12V

Published :

2003

Max Junction Temperature (Tj) :

150°C

Rise Time :

32ns

Number of Channels :

1

Peak Reflow Temperature (Cel) :

260

Mounting Type :

Surface Mount

Number of Pins :

3

Transistor Application :

SWITCHING

FET Type :

P-Channel

Contact Plating :

Tin

Operating Temperature :

-55°C~150°C TJ

Element Configuration :

Single

Vgs (Max) :

±8V

Transistor Element Material :

SILICON

Rds On (Max) @ Id, Vgs :

50m Ω @ 4.3A, 4.5V

Current Rating :

-4.3A

Mount :

Surface Mount

ECCN Code :

EAR99

Time@Peak Reflow Temperature-Max (s) :

30

Continuous Drain Current (ID) :

-4.3A

JESD-609 Code :

e3

Drain to Source Voltage (Vdss) :

12V

Length :

3.0226mm

Drive Voltage (Max Rds On,Min Rds On) :

1.8V 4.5V

Threshold Voltage :

-550mV

Vgs(th) (Max) @ Id :

950mV @ 250μA