IRLML6346TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Length :

3.04mm

Power Dissipation-Max :

1.3W Ta

Fall Time (Typ) :

4.9 ns

Packaging :

Tape and Reel (TR)

Vgs(th) (Max) @ Id :

1.1V @ 10μA

Series :

HEXFET®

Threshold Voltage :

800mV

Nominal Vgs :

800 mV

Gate Charge (Qg) (Max) @ Vgs :

2.9nC @ 4.5V

Recovery Time :

13 ns

Number of Pins :

3

Operating Temperature :

-55°C~150°C TJ

Rds On (Max) @ Id, Vgs :

63m Ω @ 3.4A, 4.5V

RoHS Status :

ROHS3 Compliant

Vgs (Max) :

±12V

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 4.5V

Mount :

Surface Mount

Turn On Delay Time :

3.3 ns

Transistor Application :

SWITCHING

ECCN Code :

EAR99

Terminal Form :

Gull wing

Drain to Source Breakdown Voltage :

30V

Input Capacitance (Ciss) (Max) @ Vds :

270pF @ 24V

Power Dissipation :

1.3W

JESD-609 Code :

e3

Qualification Status :

Not Qualified

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Continuous Drain Current (ID) :

3.4A

Terminal Finish :

Matte Tin (Sn)

Element Configuration :

Single

Mounting Type :

Surface Mount

Number of Elements :

1

Operating Mode :

ENHANCEMENT MODE

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Resistance :

80mOhm

Number of Terminations :

3

Gate to Source Voltage (Vgs) :

12V

Rise Time :

4ns

Height :

1.12mm

Manufacturer Package Identifier :

Micro3

Number of Channels :

1

FET Type :

N-Channel

Lead Free :

Lead Free

Terminal Position :

Dual

Package / Case :

TO-236-3, SC-59, SOT-23-3

Max Junction Temperature (Tj) :

150°C

Width :

1.4mm

Current - Continuous Drain (Id) @ 25°C :

3.4A Ta

Turn-Off Delay Time :

12 ns

Transistor Element Material :

SILICON

Published :

2012

REACH SVHC :

No SVHC

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Factory Lead Time :

12 Weeks