IRLML6302TR

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Published :

2004

Gate to Source Voltage (Vgs) :

12V

Package / Case :

TO-236-3, SC-59, SOT-23-3

Voltage - Rated DC :

-20V

Qualification Status :

Not Qualified

FET Type :

P-Channel

Additional Feature :

LOGIC LEVEL COMPATIBLE

Number of Pins :

3

Drain to Source Voltage (Vdss) :

20V

Input Capacitance (Ciss) (Max) @ Vds :

97pF @ 15V

Number of Terminations :

3

Packaging :

Cut Tape (CT)

Current - Continuous Drain (Id) @ 25°C :

780mA Ta

Gate Charge (Qg) (Max) @ Vgs :

3.6nC @ 4.45V

Min Operating Temperature :

-55°C

Mount :

Surface Mount

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Terminal Form :

Gull wing

Terminal Finish :

Matte Tin (Sn)

JESD-609 Code :

e3

Current Rating :

-620mA

Configuration :

SINGLE WITH BUILT-IN DIODE

Terminal Position :

Dual

Series :

HEXFET®

Rds On (Max) @ Id, Vgs :

600m Ω @ 610mA, 4.5V

Max Operating Temperature :

150°C

Operating Mode :

ENHANCEMENT MODE

Max Power Dissipation :

540mW

Continuous Drain Current (ID) :

780mA

Vgs(th) (Max) @ Id :

1.5V @ 250µA

Number of Elements :

1

ECCN Code :

EAR99

Drain-source On Resistance-Max :

0.6Ohm

Rise Time :

22ns

Mounting Type :

Surface Mount

Lead Free :

Contains Lead

RoHS Status :

Non-RoHS Compliant

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

SWITCHING

Drain Current-Max (Abs) (ID) :

0.78A

Power Dissipation :

540mW