IRLML6244TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Series :

HEXFET®

ECCN Code :

EAR99

Continuous Drain Current (ID) :

6.3A

Max Junction Temperature (Tj) :

150°C

Turn-Off Delay Time :

19 ns

Height :

1.12mm

Fall Time (Typ) :

12 ns

RoHS Status :

ROHS3 Compliant

JESD-609 Code :

e3

Turn On Delay Time :

4.9 ns

Lead Free :

Lead Free

Number of Terminations :

3

Rise Time :

7.5ns

Number of Pins :

3

Mount :

Surface Mount

FET Type :

N-Channel

Published :

2012

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 4.5V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Breakdown Voltage :

20V

Input Capacitance (Ciss) (Max) @ Vds :

700pF @ 16V

Rds On (Max) @ Id, Vgs :

21m Ω @ 6.3A, 4.5V

Threshold Voltage :

900mV

Mounting Type :

Surface Mount

Width :

1.4mm

REACH SVHC :

No SVHC

Power Dissipation-Max :

1.3W Ta

Gate to Source Voltage (Vgs) :

12V

Number of Channels :

1

Operating Temperature :

-55°C~150°C TJ

Vgs(th) (Max) @ Id :

1.1V @ 10μA

Operating Mode :

ENHANCEMENT MODE

Terminal Finish :

Matte Tin (Sn)

Current - Continuous Drain (Id) @ 25°C :

6.3A Ta

Gate Charge (Qg) (Max) @ Vgs :

8.9nC @ 4.5V

Length :

3.04mm

Recovery Time :

18 ns

Packaging :

Tape and Reel (TR)

Resistance :

27mOhm

Element Configuration :

Single

Nominal Vgs :

12 V

Factory Lead Time :

12 Weeks

Terminal Form :

Gull wing

Transistor Application :

SWITCHING

Package / Case :

TO-236-3, SC-59, SOT-23-3

Transistor Element Material :

SILICON

Vgs (Max) :

±12V

Number of Elements :

1

Power Dissipation :

1.3W

Terminal Position :

Dual

Radiation Hardening :

No