IRLML5203TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Input Capacitance (Ciss) (Max) @ Vds :

510pF @ 25V

Width :

3.05mm

Voltage - Rated DC :

-30V

Gate Charge (Qg) (Max) @ Vgs :

14nC @ 10V

Number of Elements :

1

Drain Current-Max (Abs) (ID) :

3A

Length :

3.0226mm

Transistor Element Material :

SILICON

Power Dissipation-Max :

1.25W Ta

Fall Time (Typ) :

52 ns

Gate to Source Voltage (Vgs) :

20V

Rds On (Max) @ Id, Vgs :

98m Ω @ 3A, 10V

ECCN Code :

EAR99

REACH SVHC :

No SVHC

Drain to Source Voltage (Vdss) :

30V

FET Type :

P-Channel

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Package / Case :

TO-236-3, SC-59, SOT-23-3

Drain to Source Breakdown Voltage :

-30V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Operating Temperature :

-55°C~150°C TJ

Published :

2003

Number of Terminations :

3

RoHS Status :

ROHS3 Compliant

Factory Lead Time :

12 Weeks

Termination :

SMD/SMT

Height :

1.016mm

Mount :

Surface Mount

Pulsed Drain Current-Max (IDM) :

24A

JESD-609 Code :

e3

Packaging :

Tape and Reel (TR)

Vgs (Max) :

±20V

Series :

HEXFET®

Continuous Drain Current (ID) :

-3A

Radiation Hardening :

No

Lead Free :

Contains Lead

Threshold Voltage :

-2.5V

Power Dissipation :

1.25W

Number of Pins :

3

Dual Supply Voltage :

-30V

Element Configuration :

Single

Contact Plating :

Tin

Turn-Off Delay Time :

88 ns

Turn On Delay Time :

12 ns

Current - Continuous Drain (Id) @ 25°C :

3A Ta

Terminal Position :

Dual

Nominal Vgs :

-2.5 V

Rise Time :

18ns

Operating Mode :

ENHANCEMENT MODE

Resistance :

98mOhm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Form :

Gull wing

Current Rating :

-3A

Transistor Application :

SWITCHING

Mounting Type :

Surface Mount