IRLML5103TR

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation-Max :

540mW Ta

ECCN Code :

EAR99

Height :

1.016mm

Dual Supply Voltage :

-30V

Current Rating :

-610mA

Length :

3.0226mm

Turn-Off Delay Time :

23 ns

Package / Case :

TO-236-3, SC-59, SOT-23-3

Terminal Finish :

Matte Tin (Sn)

Transistor Element Material :

SILICON

Manufacturer Package Identifier :

Micro(SOT23)

Number of Terminations :

3

Lead Free :

Lead Free

Nominal Vgs :

-1 V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

ROHS3 Compliant

Rds On (Max) @ Id, Vgs :

600m Ω @ 600mA, 10V

FET Type :

P-Channel

Drain Current-Max (Abs) (ID) :

0.76A

Turn On Delay Time :

10 ns

Gate to Source Voltage (Vgs) :

20V

Termination :

SMD/SMT

REACH SVHC :

No SVHC

Peak Reflow Temperature (Cel) :

260

Published :

2004

Mounting Type :

Surface Mount

Qualification Status :

Not Qualified

Current - Continuous Drain (Id) @ 25°C :

760mA Ta

Voltage - Rated DC :

-30V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Time@Peak Reflow Temperature-Max (s) :

30

JESD-609 Code :

e3

Packaging :

Tape and Reel (TR)

Drain to Source Breakdown Voltage :

-30V

Operating Mode :

ENHANCEMENT MODE

Rise Time :

8.2ns

Number of Pins :

3

Gate Charge (Qg) (Max) @ Vgs :

5.1nC @ 10V

Width :

1.397mm

Number of Elements :

1

Series :

HEXFET®

Additional Feature :

LOGIC LEVEL COMPATIBLE

Vgs(th) (Max) @ Id :

1V @ 250μA

Factory Lead Time :

12 Weeks

Terminal Form :

Gull wing

Element Configuration :

Single

Vgs (Max) :

±20V

Min Breakdown Voltage :

30V

Transistor Application :

SWITCHING

Fall Time (Typ) :

16 ns

Threshold Voltage :

-1V

Mount :

Surface Mount

Terminal Position :

Dual

Power Dissipation :

540mW

Resistance :

600mOhm

Continuous Drain Current (ID) :

-760mA

Operating Temperature :

-55°C~150°C TJ

Input Capacitance (Ciss) (Max) @ Vds :

75pF @ 25V