IRLML2803TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Nominal Vgs :

1 V

Current Rating :

1.2A

Number of Pins :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Termination :

SMD/SMT

Min Breakdown Voltage :

30V

Turn On Delay Time :

3.9 ns

Operating Temperature :

-55°C~150°C TJ

Input Capacitance (Ciss) (Max) @ Vds :

85pF @ 25V

Vgs (Max) :

±20V

Operating Mode :

ENHANCEMENT MODE

Gate Charge (Qg) (Max) @ Vgs :

5nC @ 10V

Power Dissipation-Max :

540mW Ta

Manufacturer Package Identifier :

Micro3

Radiation Hardening :

No

Element Configuration :

Single

Mounting Type :

Surface Mount

Contact Plating :

Tin

Fall Time (Typ) :

1.7 ns

Height :

1.12mm

RoHS Status :

ROHS3 Compliant

Rise Time :

4ns

Series :

HEXFET®

Published :

2007

Length :

3.0226mm

Terminal Form :

Gull wing

Additional Feature :

High Reliability

ECCN Code :

EAR99

Number of Elements :

1

Drain to Source Breakdown Voltage :

30V

Package / Case :

TO-236-3, SC-59, SOT-23-3

JESD-609 Code :

e3

Voltage - Rated DC :

30V

Power Dissipation :

540mW

Gate to Source Voltage (Vgs) :

20V

FET Type :

N-Channel

Packaging :

Tape and Reel (TR)

Max Junction Temperature (Tj) :

150°C

Dual Supply Voltage :

30V

Transistor Element Material :

SILICON

Current - Continuous Drain (Id) @ 25°C :

1.2A Ta

Rds On (Max) @ Id, Vgs :

250m Ω @ 910mA, 10V

Number of Terminations :

3

Width :

1.397mm

Mount :

Surface Mount

Lead Free :

Lead Free

Vgs(th) (Max) @ Id :

1V @ 250μA

Turn-Off Delay Time :

9 ns

Threshold Voltage :

1V

Continuous Drain Current (ID) :

1.2A

Transistor Application :

SWITCHING

Factory Lead Time :

12 Weeks

REACH SVHC :

No SVHC

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Terminal Position :

Dual

Number of Channels :

1

Resistance :

250mOhm