IRLML2803TR

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Configuration :

SINGLE WITH BUILT-IN DIODE

Transistor Element Material :

SILICON

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Power Dissipation-Max (Abs) :

0.54W

Drain Current-Max (Abs) (ID) :

1.2A

Packaging :

Cut Tape (CT)

Qualification Status :

Not Qualified

Vgs(th) (Max) @ Id :

1V @ 250μA

JESD-30 Code :

R-PDSO-G3

Number of Terminations :

3

Drain to Source Voltage (Vdss) :

30V

DS Breakdown Voltage-Min :

30V

Terminal Position :

Dual

Additional Feature :

High Reliability

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Drain-source On Resistance-Max :

0.25Ohm

HTS Code :

8541.21.00.95

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

Non-RoHS Compliant

Transistor Application :

SWITCHING

Operating Temperature (Max) :

150°C

FET Type :

N-Channel

Series :

HEXFET®

ECCN Code :

EAR99

Input Capacitance (Ciss) (Max) @ Vds :

85pF @ 25V

Operating Temperature (Min) :

-55°C

Surface Mount :

yes

Rds On (Max) @ Id, Vgs :

250m Ω @ 910mA, 10V

JESD-609 Code :

e3

Current - Continuous Drain (Id) @ 25°C :

1.2A Ta

Package / Case :

TO-236-3, SC-59, SOT-23-3

Terminal Form :

Gull wing

Operating Mode :

ENHANCEMENT MODE

Mounting Type :

Surface Mount

Gate Charge (Qg) (Max) @ Vgs :

5nC @ 10V

Number of Elements :

1

JEDEC-95 Code :

TO-236AB

Published :

2003

Terminal Finish :

Matte Tin (Sn)