IRLML2502TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Termination :

SMD/SMT

Width :

3.05mm

Additional Feature :

High Reliability

Operating Temperature :

-55°C~150°C TJ

REACH SVHC :

No SVHC

Factory Lead Time :

12 Weeks

Voltage - Rated DC :

20V

Number of Pins :

3

Input Capacitance (Ciss) (Max) @ Vds :

740pF @ 15V

Number of Terminations :

3

Transistor Application :

SWITCHING

Series :

HEXFET®

Vgs (Max) :

±12V

Time@Peak Reflow Temperature-Max (s) :

30

Height :

1.016mm

Peak Reflow Temperature (Cel) :

260

Nominal Vgs :

1.2 V

Number of Elements :

1

Transistor Element Material :

SILICON

Drain to Source Breakdown Voltage :

20V

Mount :

Surface Mount

Current - Continuous Drain (Id) @ 25°C :

4.2A Ta

Terminal Position :

Dual

Contact Plating :

Tin

Threshold Voltage :

1.2V

Gate to Source Voltage (Vgs) :

12V

Radiation Hardening :

No

Terminal Form :

Gull wing

JESD-609 Code :

e3

Dual Supply Voltage :

20V

ECCN Code :

EAR99

Resistance :

45mOhm

Element Configuration :

Single

FET Type :

N-Channel

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current Rating :

4.2A

Packaging :

Tape and Reel (TR)

Turn-Off Delay Time :

54 ns

Published :

2004

Length :

2.794mm

Rds On (Max) @ Id, Vgs :

45m Ω @ 4.2A, 4.5V

Package / Case :

TO-236-3, SC-59, SOT-23-3

Lead Free :

Lead Free

Vgs(th) (Max) @ Id :

1.2V @ 250µA

Power Dissipation :

1.25W

Mounting Type :

Surface Mount

Fall Time (Typ) :

26 ns

Rise Time :

10ns

Operating Mode :

ENHANCEMENT MODE

RoHS Status :

ROHS3 Compliant

Power Dissipation-Max :

1.25W Ta

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 4.5V

Gate Charge (Qg) (Max) @ Vgs :

12nC @ 5V

Continuous Drain Current (ID) :

4.2A

Turn On Delay Time :

7.5 ns