IRLD110PBF

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Fall Time (Typ) :

47 ns

Rds On (Max) @ Id, Vgs :

540mOhm @ 600mA, 5V

Power Dissipation-Max :

1.3W Ta

Factory Lead Time :

8 Weeks

Gate Charge (Qg) (Max) @ Vgs :

6.1nC @ 5V

Published :

2011

Input Capacitance (Ciss) (Max) @ Vds :

250pF @ 25V

Supplier Device Package :

4-DIP, Hexdip, HVMDIP

Lead Free :

Lead Free

Width :

6.29mm

Vgs (Max) :

±10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Min Operating Temperature :

-55°C

Mount :

Through Hole

Packaging :

Tube

Operating Temperature :

-55°C~175°C TJ

Mounting Type :

Through Hole

Nominal Vgs :

2 V

Gate to Source Voltage (Vgs) :

10V

Package / Case :

4-DIP (0.300, 7.62mm)

RoHS Status :

ROHS3 Compliant

FET Type :

N-Channel

Turn On Delay Time :

9.3 ns

Length :

5mm

Input Capacitance :

250pF

Drive Voltage (Max Rds On,Min Rds On) :

4V 5V

Element Configuration :

Single

Number of Pins :

4

Number of Elements :

1

Current - Continuous Drain (Id) @ 25°C :

1A Ta

Height :

3.37mm

Drain to Source Voltage (Vdss) :

100V

Drain to Source Resistance :

540mOhm

REACH SVHC :

Unknown

Resistance :

540mOhm

Radiation Hardening :

No

Turn-Off Delay Time :

16 ns

Threshold Voltage :

2V

Voltage - Rated DC :

100V

Power Dissipation :

1.3W

Rds On Max :

540 mΩ

Max Operating Temperature :

175°C

Drain to Source Breakdown Voltage :

100V

Current Rating :

1A

Vgs(th) (Max) @ Id :

2V @ 250μA

Continuous Drain Current (ID) :

1A

Rise Time :

47ns