IRLD110

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Max Operating Temperature :

150°C

Package / Case :

4-DIP (0.300, 7.62mm)

Power Dissipation-Max :

1.3W Ta

Turn-Off Delay Time :

16 ns

Drain to Source Resistance :

540mOhm

Input Capacitance :

250pF

FET Type :

N-Channel

Input Capacitance (Ciss) (Max) @ Vds :

250pF @ 25V

Vgs(th) (Max) @ Id :

2V @ 250μA

Drain to Source Breakdown Voltage :

100V

Length :

5mm

Vgs (Max) :

±10V

Rise Time :

47ns

Drain to Source Voltage (Vdss) :

100V

Published :

2013

Number of Pins :

4

Rds On Max :

540 mΩ

Number of Channels :

1

Rds On (Max) @ Id, Vgs :

540mOhm @ 600mA, 5V

Supplier Device Package :

4-DIP, Hexdip, HVMDIP

Gate Charge (Qg) (Max) @ Vgs :

6.1nC @ 5V

Continuous Drain Current (ID) :

1A

Gate to Source Voltage (Vgs) :

10V

Turn On Delay Time :

9.3 ns

Mounting Type :

Through Hole

Fall Time (Typ) :

47 ns

Operating Temperature :

-55°C~175°C TJ

Height :

3.37mm

Current - Continuous Drain (Id) @ 25°C :

1A Ta

Width :

6.29mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

Non-RoHS Compliant

Min Operating Temperature :

-55°C

Drive Voltage (Max Rds On,Min Rds On) :

4V 5V

Packaging :

Tube

Mount :

Through Hole