IRLD024PBF
- Mfr.Part #
- IRLD024PBF
- Manufacturer
- Vishay
- Package / Case
- 4-DIP (0.300, 7.62mm)
- Datasheet
- Download
- Description
- MOSFET N-CH 60V 2.5A 4DIP
- Stock
- 13,548
- In Stock :
- 13,548
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Input Capacitance :
- 870pF
- Turn On Delay Time :
- 11 ns
- Drain to Source Breakdown Voltage :
- 60V
- Mounting Type :
- Through Hole
- Element Configuration :
- Single
- Fall Time (Typ) :
- 110 ns
- Continuous Drain Current (ID) :
- 2.5A
- Length :
- 5mm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- RoHS Status :
- ROHS3 Compliant
- Turn-Off Delay Time :
- 23 ns
- Voltage - Rated DC :
- 60V
- Package / Case :
- 4-DIP (0.300, 7.62mm)
- Factory Lead Time :
- 8 Weeks
- Lead Free :
- Lead Free
- Max Operating Temperature :
- 175°C
- Supplier Device Package :
- 4-DIP, Hexdip, HVMDIP
- Mount :
- Through Hole
- Number of Pins :
- 4
- Vgs(th) (Max) @ Id :
- 2V @ 250μA
- Min Operating Temperature :
- -55°C
- Gate Charge (Qg) (Max) @ Vgs :
- 18nC @ 5V
- Vgs (Max) :
- ±10V
- Current - Continuous Drain (Id) @ 25°C :
- 2.5A Ta
- Rise Time :
- 110ns
- Number of Elements :
- 1
- Drive Voltage (Max Rds On,Min Rds On) :
- 4V 5V
- Power Dissipation :
- 1.3W
- Drain to Source Voltage (Vdss) :
- 60V
- Resistance :
- 100MOhm
- Recovery Time :
- 260 ns
- Gate to Source Voltage (Vgs) :
- 10V
- Threshold Voltage :
- 2V
- Drain to Source Resistance :
- 100MOhm
- FET Type :
- N-Channel
- Width :
- 6.29mm
- Power Dissipation-Max :
- 1.3W Ta
- Rds On Max :
- 100 mΩ
- Input Capacitance (Ciss) (Max) @ Vds :
- 870pF @ 25V
- Current Rating :
- 2.5A
- Radiation Hardening :
- No
- REACH SVHC :
- Unknown
- Operating Temperature :
- -55°C~175°C TJ
- Packaging :
- Tube
- Rds On (Max) @ Id, Vgs :
- 100mOhm @ 1.5A, 5V
- Height :
- 3.37mm
- Datasheets
- IRLD024PBF

N-Channel Tube 100mOhm @ 1.5A, 5V ±10V 870pF @ 25V 18nC @ 5V 60V 4-DIP (0.300, 7.62mm)
IRLD024PBF Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 870pF @ 25V.This device conducts a continuous drain current (ID) of 2.5A, which is the maximum continuous current transistor can conduct.Using VGS=60V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 60V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 23 ns occurs as the input capacitance charges before drain current conduction commences.When a specific gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the drain to source resistance is 100mOhm, which means the device is not biased.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 11 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 10V.Activation of any electrical operation happens at threshold voltage, and this transistor has 2V threshold voltage.This transistor requires a drain-source voltage (Vdss) of 60V.In order to reduce power consumption, this device uses a drive voltage of 4V 5V volts (4V 5V).
IRLD024PBF Features
a continuous drain current (ID) of 2.5A
a drain-to-source breakdown voltage of 60V voltage
the turn-off delay time is 23 ns
single MOSFETs transistor is 100mOhm
a threshold voltage of 2V
a 60V drain to source voltage (Vdss)
IRLD024PBF Applications
There are a lot of Vishay Siliconix
IRLD024PBF applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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