IRLD014PBF
- Mfr.Part #
- IRLD014PBF
- Manufacturer
- Vishay
- Package / Case
- 4-DIP (0.300, 7.62mm)
- Datasheet
- Download
- Description
- MOSFET N-CH 60V 1.7A 4DIP
- Stock
- 5,376
- In Stock :
- 5,376
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Power Dissipation-Max :
- 1.3W Ta
- Number of Pins :
- 4
- Drive Voltage (Max Rds On,Min Rds On) :
- 4V 5V
- Resistance :
- 200mOhm
- Packaging :
- Tube
- Gate to Source Voltage (Vgs) :
- 10V
- Drain to Source Voltage (Vdss) :
- 60V
- Supplier Device Package :
- 4-DIP, Hexdip, HVMDIP
- REACH SVHC :
- Unknown
- Mounting Type :
- Through Hole
- Current Rating :
- 1.7A
- Vgs (Max) :
- ±10V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Turn On Delay Time :
- 9.3 ns
- Rds On (Max) @ Id, Vgs :
- 200mOhm @ 1A, 5V
- Input Capacitance (Ciss) (Max) @ Vds :
- 400pF @ 25V
- Min Operating Temperature :
- -55°C
- Number of Elements :
- 1
- Height :
- 3.3782mm
- Published :
- 2014
- Factory Lead Time :
- 8 Weeks
- Threshold Voltage :
- 2V
- Recovery Time :
- 130 ns
- Operating Temperature :
- -55°C~175°C TJ
- Lead Free :
- Lead Free
- Rds On Max :
- 200 mΩ
- Continuous Drain Current (ID) :
- 1.7A
- Mount :
- Through Hole
- Width :
- 5.0038mm
- Voltage - Rated DC :
- 60V
- Max Operating Temperature :
- 175°C
- Drain to Source Breakdown Voltage :
- 60V
- Rise Time :
- 110ns
- Turn-Off Delay Time :
- 17 ns
- FET Type :
- N-Channel
- Power Dissipation :
- 1.3W
- Drain to Source Resistance :
- 200mOhm
- Length :
- 6.2738mm
- Fall Time (Typ) :
- 110 ns
- RoHS Status :
- ROHS3 Compliant
- Package / Case :
- 4-DIP (0.300, 7.62mm)
- Current - Continuous Drain (Id) @ 25°C :
- 1.7A Ta
- Vgs(th) (Max) @ Id :
- 2V @ 250μA
- Radiation Hardening :
- No
- Input Capacitance :
- 400pF
- Element Configuration :
- Single
- Gate Charge (Qg) (Max) @ Vgs :
- 8.4nC @ 5V
- Datasheets
- IRLD014PBF

N-Channel Tube 200mOhm @ 1A, 5V ±10V 400pF @ 25V 8.4nC @ 5V 60V 4-DIP (0.300, 7.62mm)
IRLD014PBF Overview
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 400pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 1.7A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 60V, and this device has a drainage-to-source breakdown voltage of 60VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 17 ns.This device has a drain-to-source resistance of 200mOhm when a gate-to-source voltage (VGS) is applied to bias it into the on state, and when this voltage is applied to bias it into the on state.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 9.3 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 10V to 1.In this case, the threshold voltage of the transistor is 2V, which means that it will not activate any of its functions when its threshold voltage reaches 2V.For this transistor to work, a voltage 60V is required between drain and source (Vdss).Using drive voltage (4V 5V), this device contributes to a reduction in overall power consumption.
IRLD014PBF Features
a continuous drain current (ID) of 1.7A
a drain-to-source breakdown voltage of 60V voltage
the turn-off delay time is 17 ns
single MOSFETs transistor is 200mOhm
a threshold voltage of 2V
a 60V drain to source voltage (Vdss)
IRLD014PBF Applications
There are a lot of Vishay Siliconix
IRLD014PBF applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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