IRG7PSH54K10DPBF
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- Mfr.Part #
- IRG7PSH54K10DPBF
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- IGBT 1200V 120A 520W TO274AA
- Stock
- 21,525
- In Stock ：
- 21,525
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - IGBTs - Single
- Radiation Hardening :
- No
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Package / Case :
- TO-247-3
- Mount :
- Through Hole
- Switching Energy :
- 4.8mJ (on), 2.8mJ (off)
- Current - Collector Pulsed (Icm) :
- 200A
- Input Type :
- Standard
- Factory Lead Time :
- 19 Weeks
- Polarity/Channel Type :
- N-Channel
- Mounting Type :
- Through Hole
- Operating Temperature :
- -40°C~150°C TJ
- Number of Pins :
- 247
- RoHS Status :
- RoHS Compliant
- Element Configuration :
- Single
- Published :
- 2013
- Weight :
- 38.000013g
- Collector Emitter Breakdown Voltage :
- 1.2kV
- Vce(on) (Max) @ Vge, Ic :
- 2.4V @ 15V, 50A
- Gate-Emitter Voltage-Max :
- 30V
- Max Power Dissipation :
- 520W
- Collector Emitter Voltage (VCEO) :
- 2.4V
- Reverse Recovery Time :
- 170 ns
- ECCN Code :
- EAR99
- Test Condition :
- 600V, 50A, 5 Ω, 15V
- Fall Time-Max (tf) :
- 90ns
- Packaging :
- Tube
- Max Collector Current :
- 65A
- Collector Emitter Saturation Voltage :
- 2.4V
- Voltage - Collector Emitter Breakdown (Max) :
- 1200V
- Td (on/off) @ 25°C :
- 110ns/490ns
- Gate-Emitter Thr Voltage-Max :
- 7.5V
- Current - Collector (Ic) (Max) :
- 120A
- Rise Time-Max :
- 105ns
- Gate Charge :
- 435nC
- Datasheets
- IRG7PSH54K10DPBF
IRG7PSH54K10DPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at
IRG7PSH54K10DPBF Description
The IGBT combines, in a single device, a control input with a MOS structure and a bipolar power transistor that acts as an output switch. IGBTs are suitable for high-voltage, high-current applications. They are designed to drive high-power applications with a low-power input.
IRG7PSH54K10DPBF Applications
? Industrial Motor Drive
? UPS
? Solar Inverters
? Welding
IRG7PSH54K10DPBF Features
High speed H5 technology offering
*Ultra low loss switching thanks to Kelvin emitter pin in combination with TRENCHSTOPM 5
*Best-in-class efficiency in hard switching and resonant topologies
·Plug and play replacement of previous generation IGBTs650V breakdown voltage Low gate charge QG
·IGBT copacked with RAPID 1 fast and soft antiparallel diode Maximum junction temperature175°C
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