IRG7PSH50UDPBF
- Mfr.Part #
- IRG7PSH50UDPBF
- Manufacturer
- International Rectifier
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- IRG7PSH50 - DISCRETE IGBT WITH A
- Stock
- 1,485
- In Stock :
- 1,485
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- Manufacturer :
- International Rectifier
- Product Category :
- Transistors - IGBTs - Single
- RoHS Status :
- RoHS Compliant
- Current - Collector Pulsed (Icm) :
- 150A
- Package / Case :
- TO-247-3
- Td (on/off) @ 25°C :
- 35ns/430ns
- Turn Off Time-Nom (toff) :
- 650 ns
- Element Configuration :
- Single
- Vce(on) (Max) @ Vge, Ic :
- 2V @ 15V, 50A
- Max Power Dissipation :
- 462W
- Collector Emitter Breakdown Voltage :
- 1.2kV
- Number of Elements :
- 1
- Max Collector Current :
- 116A
- JESD-30 Code :
- R-PSFM-T3
- Packaging :
- Tube
- Rise Time-Max :
- 60ns
- Case Connection :
- COLLECTOR
- Fall Time-Max (tf) :
- 65ns
- Lead Free :
- Lead Free
- Number of Terminations :
- 3
- Turn On Time :
- 70 ns
- Gate-Emitter Thr Voltage-Max :
- 6V
- Radiation Hardening :
- No
- Input Type :
- Standard
- Power - Max :
- 462W
- Published :
- 2010
- IGBT Type :
- Trench
- Operating Temperature :
- -55°C~150°C TJ
- ECCN Code :
- EAR99
- Number of Pins :
- 247
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Collector Emitter Voltage (VCEO) :
- 2V
- JESD-609 Code :
- e3
- Mount :
- Through Hole
- Gate-Emitter Voltage-Max :
- 30V
- Transistor Element Material :
- SILICON
- Peak Reflow Temperature (Cel) :
- 260
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Voltage - Collector Emitter Breakdown (Max) :
- 1200V
- Polarity/Channel Type :
- N-Channel
- Mounting Type :
- Through Hole
- Terminal Finish :
- MATTE TIN OVER NICKEL
- Reverse Recovery Time :
- 190 ns
- Transistor Application :
- POWER CONTROL
- Gate Charge :
- 440nC
- Switching Energy :
- 3.6mJ (on), 2.2mJ (off)
- Test Condition :
- 600V, 50A, 5 Ω, 15V
- Datasheets
- IRG7PSH50UDPBF

IRG7PSH50UDPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at
IRG7PSH50UDPBF Description
IRG7PSH50UDPBF is a type of insulated gate bipolar transistor with an ultrafast soft recovery diode, which is designed based on low VCE (ON) trench IGBT technology. Due to low VCE (ON) and low switching losses, it is ideally suitable for a wide range of switching frequencies. Increased reliability can be ensured based on rugged transient performance. Moreover, the IRG7PSH50UDPBF IGBT is able to deliver excellent current sharing in parallel operation and tight parameter distribution.
IRG7PSH50UDPBF Features
Tight parameter distribution
Low VCE (ON) trench IGBT technology
Low switching losses
Square RBSOA
Positive VCE (ON) temperature coefficient
Ultra-fast soft recovery co-packaged diode
IRG7PSH50UDPBF Applications
U.P.S.
Welding
Solar inverter
Induction heating
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