IRG7PSH50UDPBF

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Mfr.Part #
IRG7PSH50UDPBF
Manufacturer
International Rectifier
Package / Case
TO-247-3
Datasheet
Download
Description
IRG7PSH50 - DISCRETE IGBT WITH A
Stock
1,485
In Stock :
1,485

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Manufacturer :
International Rectifier
Product Category :
Transistors - IGBTs - Single
RoHS Status :
RoHS Compliant
Current - Collector Pulsed (Icm) :
150A
Package / Case :
TO-247-3
Td (on/off) @ 25°C :
35ns/430ns
Turn Off Time-Nom (toff) :
650 ns
Element Configuration :
Single
Vce(on) (Max) @ Vge, Ic :
2V @ 15V, 50A
Max Power Dissipation :
462W
Collector Emitter Breakdown Voltage :
1.2kV
Number of Elements :
1
Max Collector Current :
116A
JESD-30 Code :
R-PSFM-T3
Packaging :
Tube
Rise Time-Max :
60ns
Case Connection :
COLLECTOR
Fall Time-Max (tf) :
65ns
Lead Free :
Lead Free
Number of Terminations :
3
Turn On Time :
70 ns
Gate-Emitter Thr Voltage-Max :
6V
Radiation Hardening :
No
Input Type :
Standard
Power - Max :
462W
Published :
2010
IGBT Type :
Trench
Operating Temperature :
-55°C~150°C TJ
ECCN Code :
EAR99
Number of Pins :
247
Time@Peak Reflow Temperature-Max (s) :
40
Collector Emitter Voltage (VCEO) :
2V
JESD-609 Code :
e3
Mount :
Through Hole
Gate-Emitter Voltage-Max :
30V
Transistor Element Material :
SILICON
Peak Reflow Temperature (Cel) :
260
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Voltage - Collector Emitter Breakdown (Max) :
1200V
Polarity/Channel Type :
N-Channel
Mounting Type :
Through Hole
Terminal Finish :
MATTE TIN OVER NICKEL
Reverse Recovery Time :
190 ns
Transistor Application :
POWER CONTROL
Gate Charge :
440nC
Switching Energy :
3.6mJ (on), 2.2mJ (off)
Test Condition :
600V, 50A, 5 Ω, 15V
Datasheets
IRG7PSH50UDPBF
Introducing Transistors - IGBTs - Single International Rectifier IRG7PSH50UDPBF from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-247-3, Number of Terminations:3, Operating Temperature:-55°C~150°C TJ, Number of Pins:247, Mounting Type:Through Hole, IRG7PSH50UDPBF pinout, IRG7PSH50UDPBF datasheet PDF, IRG7PSH50UDPBF amp .Beyond Transistors - IGBTs - Single International Rectifier IRG7PSH50UDPBF ,we also offer IXYT25N250CHV, IXYX140N120A4, IXYH30N450HV, Our vast inventory has you covered. Contact us now for immediate solutions.

International Rectifier IRG7PSH50UDPBF


IRG7PSH50UDPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at

IRG7PSH50UDPBF Description


IRG7PSH50UDPBF is a type of insulated gate bipolar transistor with an ultrafast soft recovery diode, which is designed based on low VCE (ON) trench IGBT technology. Due to low VCE (ON) and low switching losses, it is ideally suitable for a wide range of switching frequencies. Increased reliability can be ensured based on rugged transient performance. Moreover, the IRG7PSH50UDPBF IGBT is able to deliver excellent current sharing in parallel operation and tight parameter distribution.



IRG7PSH50UDPBF Features


Tight parameter distribution

Low VCE (ON) trench IGBT technology

Low switching losses

Square RBSOA

Positive VCE (ON) temperature coefficient

Ultra-fast soft recovery co-packaged diode



IRG7PSH50UDPBF Applications


U.P.S.

Welding

Solar inverter

Induction heating


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