IRG7PSH50UDPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - IGBTs - Single

Vce(on) (Max) @ Vge, Ic :

2V @ 15V, 50A

Transistor Application :

POWER CONTROL

Number of Pins :

247

Gate-Emitter Thr Voltage-Max :

6V

ECCN Code :

EAR99

Gate-Emitter Voltage-Max :

30V

Radiation Hardening :

No

JESD-30 Code :

R-PSFM-T3

Terminal Finish :

MATTE TIN OVER NICKEL

Published :

2010

Number of Terminations :

3

Test Condition :

600V, 50A, 5 Ω, 15V

Gate Charge :

440nC

Collector Emitter Voltage (VCEO) :

2V

Fall Time-Max (tf) :

65ns

JESD-609 Code :

e3

Switching Energy :

3.6mJ (on), 2.2mJ (off)

Reverse Recovery Time :

190 ns

Transistor Element Material :

SILICON

IGBT Type :

Trench

Turn On Time :

70 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Temperature :

-55°C~150°C TJ

Element Configuration :

Single

Package / Case :

TO-247-3

Max Power Dissipation :

462W

Lead Free :

Lead Free

Time@Peak Reflow Temperature-Max (s) :

40

Voltage - Collector Emitter Breakdown (Max) :

1200V

Packaging :

Tube

Mount :

Through Hole

Td (on/off) @ 25°C :

35ns/430ns

Case Connection :

COLLECTOR

Current - Collector Pulsed (Icm) :

150A

Polarity/Channel Type :

N-Channel

Collector Emitter Breakdown Voltage :

1.2kV

Peak Reflow Temperature (Cel) :

260

Mounting Type :

Through Hole

Turn Off Time-Nom (toff) :

650 ns

RoHS Status :

RoHS Compliant

Power - Max :

462W

Max Collector Current :

116A

Number of Elements :

1

Rise Time-Max :

60ns

Input Type :

Standard