IRG7PH50K10DPBF
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- Mfr.Part #
- IRG7PH50K10DPBF
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- IGBT 1200V 90A 400W TO247AC
- Stock
- 49,157
- In Stock ：
- 49,157
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - IGBTs - Single
- Mount :
- Through Hole
- Gate-Emitter Thr Voltage-Max :
- 7.5V
- Number of Pins :
- 3
- Vce(on) (Max) @ Vge, Ic :
- 2.4V @ 15V, 35A
- Element Configuration :
- Single
- Lead Free :
- Lead Free
- Polarity/Channel Type :
- N-Channel
- Current - Collector Pulsed (Icm) :
- 160A
- ECCN Code :
- EAR99
- Test Condition :
- 600V, 35A, 5 Ω, 15V
- Switching Energy :
- 2.3mJ (on), 1.6mJ (off)
- Radiation Hardening :
- No
- Fall Time-Max (tf) :
- 110ns
- Reverse Recovery Time :
- 130 ns
- RoHS Status :
- RoHS Compliant
- Collector Emitter Saturation Voltage :
- 2.4V
- Td (on/off) @ 25°C :
- 90ns/340ns
- Packaging :
- Tube
- Max Power Dissipation :
- 400W
- Operating Temperature :
- -40°C~150°C TJ
- Published :
- 2000
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Emitter Voltage (VCEO) :
- 2.4V
- Gate Charge :
- 300nC
- Package / Case :
- TO-247-3
- Max Collector Current :
- 90A
- Collector Emitter Breakdown Voltage :
- 1.2kV
- Input Type :
- Standard
- Power - Max :
- 400W
- Rise Time-Max :
- 80ns
- Mounting Type :
- Through Hole
- Voltage - Collector Emitter Breakdown (Max) :
- 1200V
- Datasheets
- IRG7PH50K10DPBF
IRG7PH50K10DPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at
IRG7PH50K10DPBF Description
The IRG7PH50K10DPBF is an Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode. A three-terminal power semiconductor known as an insulated-gate bipolar transistor (IGBT) is primarily employed as an electronic switch and has evolved over time to combine high efficiency and quick switching. It has four P-N-P-N layers that alternate, and its four layers are interconnected by a metal-oxide-semiconductor (MOS) gate structure.
IRG7PH50K10DPBF Features
-
Low VCE(ON) and switching losses
-
10μs Short Circuit SOA
-
Square RBSOA
-
Maximum Junction Temperature 150°C
-
Positive VCE (ON) Temperature Coefficient
-
VCES = 1200V
-
IC = 50A, TC =100°C
-
tSC ≥ 10μs, TJ(max) = 150°C
-
VCE(ON) typ. = 1.9V @ IC = 35A
IRG7PH50K10DPBF Applications
-
Solar Inverters
-
Welding
-
Industrial Motor Drive
-
UPS
-
Automotive
-
Traction
-
Energy transmission
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