IRG7PH50K10D-EPBF

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Mfr.Part #
IRG7PH50K10D-EPBF
Manufacturer
Infineon Technologies
Package / Case
TO-247-3
Datasheet
Download
Description
IGBT 1200V 90A 400W TO247AD
Stock
25,229
In Stock :
25,229

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Manufacturer :
Infineon Technologies
Product Category :
Transistors - IGBTs - Single
RoHS Status :
RoHS Compliant
Collector Emitter Voltage (VCEO) :
2.4V
Collector Emitter Breakdown Voltage :
1.2kV
Td (on/off) @ 25°C :
90ns/340ns
Max Power Dissipation :
400W
Published :
2013
Operating Temperature :
-40°C~150°C TJ
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Rise Time-Max :
80ns
Input Type :
Standard
ECCN Code :
EAR99
Radiation Hardening :
No
Gate-Emitter Thr Voltage-Max :
7.5V
Mounting Type :
Through Hole
Polarity/Channel Type :
N-Channel
Switching Energy :
2.3mJ (on), 1.6mJ (off)
Element Configuration :
Single
Vce(on) (Max) @ Vge, Ic :
2.4V @ 15V, 35A
Voltage - Collector Emitter Breakdown (Max) :
1200V
Mount :
Through Hole
Number of Pins :
3
Package / Case :
TO-247-3
Gate Charge :
300nC
Test Condition :
600V, 35A, 5 Ω, 15V
Max Collector Current :
90A
Power - Max :
400W
Reverse Recovery Time :
130 ns
Fall Time-Max (tf) :
110ns
Current - Collector Pulsed (Icm) :
160A
Packaging :
Tube
Datasheets
IRG7PH50K10D-EPBF
Introducing Transistors - IGBTs - Single Infineon Technologies IRG7PH50K10D-EPBF from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-40°C~150°C TJ, Mounting Type:Through Hole, Number of Pins:3, Package / Case:TO-247-3, IRG7PH50K10D-EPBF pinout, IRG7PH50K10D-EPBF datasheet PDF, IRG7PH50K10D-EPBF amp .Beyond Transistors - IGBTs - Single Infineon Technologies IRG7PH50K10D-EPBF ,we also offer IXYT25N250CHV, IXYX140N120A4, IXYH30N450HV, Our vast inventory has you covered. Contact us now for immediate solutions.

Infineon Technologies IRG7PH50K10D-EPBF


IRG7PH50K10D-EPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at

IRG7PH50K10D-EPBF Description

 

IRG7PH50K10D-EPBF transistor is a MOS field-effect transistor designed to be used in signal applications. The special low thermal resistance packaging makes IRG7PH50K10D-EPBF MOSFET suitable for ISM applications in which reliability and durability are essential. It has the common source configuration.

 

 

IRG7PH50K10D-EPBF Features

 

Gold metalization

Excellent thermal stability

Common source configuration

Thermally enhanced packaging

 

 

IRG7PH50K10D-EPBF Applications

 

ISM applications

DC large signal applications

Power factor correction

Electronic lamp ballasts

Flat panel display


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