IRG7PH46UEP

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Mfr.Part #
IRG7PH46UEP
Manufacturer
Infineon Technologies
Package / Case
TO-247-3
Datasheet
Download
Description
IGBT, 108A, 1200V, N-CHANNEL
Stock
100
In Stock :
100

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Manufacturer :
Infineon Technologies
Product Category :
Transistors - IGBTs - Single
Case Connection :
COLLECTOR
Gate-Emitter Thr Voltage-Max :
6V
Lead Free :
Lead Free
Vce(on) (Max) @ Vge, Ic :
2V @ 15V, 40A
Gate Charge :
220nC
Package / Case :
TO-247-3
JEDEC-95 Code :
TO-247AD
Number of Elements :
1
Switching Energy :
2.56mJ (on), 1.78mJ (off)
Collector Emitter Saturation Voltage :
1.7V
Td (on/off) @ 25°C :
45ns/410ns
Max Power Dissipation :
469W
IGBT Type :
Trench
Transistor Application :
POWER CONTROL
Polarity/Channel Type :
N-Channel
Transistor Element Material :
SILICON
Fall Time-Max (tf) :
65ns
Operating Temperature :
-55°C~175°C TJ
Mounting Type :
Through Hole
Collector Emitter Voltage (VCEO) :
2V
Turn On Time :
80 ns
ECCN Code :
EAR99
Power - Max :
469W
REACH SVHC :
No SVHC
Number of Terminations :
3
Voltage - Collector Emitter Breakdown (Max) :
1200V
RoHS Status :
RoHS Compliant
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Input Type :
Standard
Qualification Status :
Not Qualified
Packaging :
Tube
Number of Pins :
3
Element Configuration :
Single
Test Condition :
600V, 40A, 10 Ω, 15V
Turn Off Time-Nom (toff) :
700 ns
Rise Time-Max :
55ns
Published :
2011
Collector Emitter Breakdown Voltage :
1.2kV
Max Collector Current :
130A
Current - Collector Pulsed (Icm) :
160A
Mount :
Through Hole
Datasheets
IRG7PH46UEP
Introducing Transistors - IGBTs - Single Infineon Technologies IRG7PH46UEP from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-247-3, Operating Temperature:-55°C~175°C TJ, Mounting Type:Through Hole, Number of Terminations:3, Number of Pins:3, IRG7PH46UEP pinout, IRG7PH46UEP datasheet PDF, IRG7PH46UEP amp .Beyond Transistors - IGBTs - Single Infineon Technologies IRG7PH46UEP ,we also offer IXYT25N250CHV, IXYX140N120A4, IXYH30N450HV, Our vast inventory has you covered. Contact us now for immediate solutions.

Infineon Technologies IRG7PH46UEP


IRG7PH46U-EP datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at

IRG7PH46U-EP               Description

 

The IGBT combines, in a single device, a control input with a MOS structure and a bipolar power transistor that acts as an output switch. IGBTs are suitable for high-voltage, high-current applications. They are designed to drive high-power applications with a low-power input.

 


IRG7PH46U-EP               Features


? Low VCE (ON) trench IGBT technology

? Low switching losses

? Maximum junction temperature 175 °C

? Square RBSOA

? 100% of the parts tested for ILM

? Positive VCE (ON) temperature co-efficient

? Tight parameter distribution

? Lead -Free

 

IRG7PH46U-EP               Applications

? U.P.S

? Welding

? Solar inverter

? Induction heating

 



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