IRG7PH46U-EP
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- Mfr.Part #
- IRG7PH46U-EP
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- IGBT TRENCH 1200V 130A TO247AD
- Stock
- 94
- In Stock ：
- 94
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - IGBTs - Single
- Turn On Time :
- 80 ns
- JEDEC-95 Code :
- TO-247AD
- Collector Emitter Saturation Voltage :
- 1.7V
- Gate-Emitter Thr Voltage-Max :
- 6V
- IGBT Type :
- Trench
- Power - Max :
- 469W
- Fall Time-Max (tf) :
- 65ns
- Transistor Element Material :
- SILICON
- Collector Emitter Breakdown Voltage :
- 1.2kV
- Switching Energy :
- 2.56mJ (on), 1.78mJ (off)
- Mounting Type :
- Through Hole
- Mount :
- Through Hole
- Published :
- 2011
- Qualification Status :
- Not Qualified
- Case Connection :
- COLLECTOR
- Polarity/Channel Type :
- N-Channel
- Number of Elements :
- 1
- Collector Emitter Voltage (VCEO) :
- 2V
- Element Configuration :
- Single
- REACH SVHC :
- No SVHC
- Test Condition :
- 600V, 40A, 10 Ω, 15V
- Current - Collector Pulsed (Icm) :
- 160A
- Lead Free :
- Lead Free
- Vce(on) (Max) @ Vge, Ic :
- 2V @ 15V, 40A
- Input Type :
- Standard
- Packaging :
- Tube
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Pins :
- 3
- Number of Terminations :
- 3
- Max Collector Current :
- 130A
- Gate Charge :
- 220nC
- Turn Off Time-Nom (toff) :
- 700 ns
- Max Power Dissipation :
- 469W
- Rise Time-Max :
- 55ns
- Operating Temperature :
- -55°C~175°C TJ
- ECCN Code :
- EAR99
- RoHS Status :
- RoHS Compliant
- Td (on/off) @ 25°C :
- 45ns/410ns
- Package / Case :
- TO-247-3
- Transistor Application :
- POWER CONTROL
- Voltage - Collector Emitter Breakdown (Max) :
- 1200V
- Datasheets
- IRG7PH46U-EP
IRG7PH46U-EP datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at
IRG7PH46U-EP Description
The IGBT combines, in a single device, a control input with a MOS structure and a bipolar power transistor that acts as an output switch. IGBTs are suitable for high-voltage, high-current applications. They are designed to drive high-power applications with a low-power input.
IRG7PH46U-EP Features
? Low VCE (ON) trench IGBT technology
? Low switching losses
? Maximum junction temperature 175 °C
? Square RBSOA
? 100% of the parts tested for ILM
? Positive VCE (ON) temperature co-efficient
? Tight parameter distribution
? Lead -Free
IRG7PH46U-EP Applications
? U.P.S
? Welding
? Solar inverter
? Induction heating
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