IRG7PH42UDPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - IGBTs - Single

RoHS Status :

ROHS3 Compliant

Vce(on) (Max) @ Vge, Ic :

2V @ 15V, 30A

Number of Terminations :

3

Collector Emitter Saturation Voltage :

1.7V

Turn On Time :

51 ns

Rise Time-Max :

41ns

Lead Free :

Lead Free

Collector Emitter Breakdown Voltage :

1.2kV

IGBT Type :

Trench

Switching Energy :

2.11mJ (on), 1.18mJ (off)

Transistor Application :

POWER CONTROL

Height :

20.7mm

Mount :

Through Hole

Gate-Emitter Thr Voltage-Max :

6V

Max Collector Current :

85A

ECCN Code :

EAR99

Td (on/off) @ 25°C :

25ns/229ns

Number of Pins :

3

Operating Temperature :

-55°C~150°C TJ

Fall Time-Max (tf) :

86ns

Length :

15.87mm

Current - Collector Pulsed (Icm) :

90A

Voltage - Collector Emitter Breakdown (Max) :

1200V

REACH SVHC :

No SVHC

Test Condition :

600V, 30A, 10 Ω, 15V

Width :

5.3086mm

JEDEC-95 Code :

TO-247AC

Number of Elements :

1

Weight :

38.000013g

Case Connection :

COLLECTOR

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON

Element Configuration :

Single

Turn Off Time-Nom (toff) :

444 ns

Polarity/Channel Type :

N-Channel

Reverse Recovery Time :

153 ns

Packaging :

Tube

Turn-Off Delay Time :

229 ns

Published :

2004

Turn On Delay Time :

25 ns

Radiation Hardening :

No

Package / Case :

TO-247-3

Mounting Type :

Through Hole

Max Power Dissipation :

320W

Gate Charge :

157nC

Collector Emitter Voltage (VCEO) :

2V

Input Type :

Standard

Factory Lead Time :

16 Weeks

Power Dissipation :

320W